In-situ X-ray mu Laue diffraction study of copper through-silicon vias

Dario Ferreira Sanchez (1) , Shay Reboh (1) , Monica Larissa Djomeni Weleguela (1) , Jean-Sebastien Micha (2) , Odile Robach (3) , Thierry Mourier (1) , Patrice Gergaud (1) , Pierre Bleuet (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 PCI - Polymères Conducteurs Ioniques
3 NRS - Nanostructures et Rayonnement Synchrotron

In this work, we developed an original in-situ strain investigation of a Cu through silicon vias (TSVs) sample using X-ray mu Laue diffraction mapping. We perform an in-situ investigation of a Cu TSV sample. Three different stages were analysed: (i) at room temperature, (ii) during an annealing at 400 degrees C and, (iii) at room temperature again after the annealing. In combination with analytical and Finite Element Method analysis, the Cu extrusion and grain growth are identified and quantified, and, their effects on the measured Si strain fields are discussed. (C) 2015 Elsevier Ltd. All rights reserved.

Keywords: Through silicon vias (TSVs); Microelectronics reliability; Copper; Laue micro-diffraction; High-Aspect-Ratio; Thermal-Stresses

Domains: Physics [physics]

Dario Ferreira Sanchez, Shay Reboh, Monica Larissa Djomeni Weleguela, Jean-Sebastien Micha, Odile Robach, et al.. In-situ X-ray mu Laue diffraction study of copper through-silicon vias. Microelectronics Reliability, 2016, 56, pp.78-84. ⟨10.1016/j.microrel.2015.10.008⟩. ⟨cea-01849434⟩