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Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

Heorhii Bohuslavskyi 1, 2 Dharmraj Kotekar-Patil 2 Romain Maurand 2 Andrea Corna 2 Sylvain Barraud 3 Leo Bourdet 4 Louis Hutin 1 Yann Michel Niquet 4 Xavier Jehl 2 Silvano de Franceschi 2 Maud Vinet 1 M. Sanquer 2
1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 LaTEQS - Laboratoire de Transport Electronique Quantique et Supraconductivité
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/IRIG/PHELIQS
3 DCOS - Département Composants Silicium
4 LSIM - Laboratory of Atomistic Simulation
MEM - Modélisation et Exploration des Matériaux : DRF/IRIG/MEM
Abstract : We report on the hole compact double quantum dots fabricated using a conventional CMOS technology. We provide the evidence of Pauli spin blockade in the few hole regime that is relevant to spin qubit implementations. A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate approximate to 120 kHz for the first holes, an important step towards a robust hole spin-orbit qubit. Published by AIP Publishing.
Keywords : Current voltage characteristics Nanocrystals Quantum computers CMOS technology Double quantum dots Spin blockade Spin orbit interactions Spin orbits Spin qubit Spin-relaxation rates Zero magnetic fields Semiconductor quantum dots
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https://hal-cea.archives-ouvertes.fr/cea-01849344
Contributor : Jérôme Planès <>
Submitted on : Thursday, July 26, 2018 - 9:27:06 AM
Last modification on : Tuesday, November 24, 2020 - 4:00:08 PM

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Heorhii Bohuslavskyi, Dharmraj Kotekar-Patil, Romain Maurand, Andrea Corna, Sylvain Barraud, et al.. Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction. Applied Physics Letters, American Institute of Physics, 2016, 109 (19), pp.193101. ⟨10.1063/1.4966946⟩. ⟨cea-01849344⟩

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