A single-atom transistor, Nature Nanotechnology, vol.7, pp.242-246, 2012. ,
High-fidelity readout and control of a nuclear spin qubit in silicon, Nature, vol.496, pp.334-342, 2013. ,
Electron spin lifetime of a single antimony donor in silicon, Applied Physics Letters, vol.103, p.143115, 2013. ,
Storing quantum information for 30 seconds in a nanoelectronic device, Nature Nanotechnology, vol.9, pp.1-14, 2014. ,
A single-atom quantum memory in silicon, Quantum Science and Technology, vol.2, issue.1, p.15009, 2017. ,
DOI : 10.1088/2058-9565/aa63a4
URL : http://arxiv.org/pdf/1608.07109
Electron spin coherence exceeding seconds in high-purity silicon, Nature materials, vol.11, pp.143-147, 2012. ,
Room-Temperature Quantum Bit Storage Exceeding 39 Minutes Using Ionized Donors in Silicon-28, Science, vol.13, issue.1, pp.830-833, 2013. ,
DOI : 10.1103/PhysRevB.13.1681
Bismuth Qubits in Silicon: The Role of EPR Cancellation Resonances, Physical Review Letters, vol.105, issue.6, pp.2-5, 2010. ,
DOI : 10.1016/j.physb.2004.01.068
URL : http://discovery.ucl.ac.uk/569359/1/569359.pdf
Atomic clock transitions in silicon-based spin qubits, Nature Nanotechnology, vol.95, issue.8, pp.561-565, 2013. ,
DOI : 10.1103/PhysRevLett.95.030506
URL : http://arxiv.org/pdf/1301.6567
donors in silicon using circularly polarized microwaves, Physical Review B, vol.93, issue.12, p.121306, 2016. ,
DOI : 10.1038/nature12011
URL : https://link.aps.org/accepted/10.1103/PhysRevB.93.121306
Reaching the quantum limit of sensitivity in electron spin resonance, Nature Nanotechnology, vol.110, issue.3, pp.253-257, 2015. ,
DOI : 10.1103/PhysRevLett.110.067004
URL : https://hal.archives-ouvertes.fr/cea-01366689
Controlling spin relaxation with a cavity, Nature, vol.141, issue.7592, pp.74-77, 2016. ,
DOI : 10.1063/1.4891866
URL : https://hal.archives-ouvertes.fr/cea-01483751
Quantum Computing with an Electron Spin Ensemble, Physical Review Letters, vol.103, issue.7, pp.1-4, 2009. ,
DOI : 10.1103/PhysRevLett.100.227006
URL : http://arxiv.org/pdf/0903.3506
Hybrid Quantum Circuit with a Superconducting Qubit Coupled to a Spin Ensemble, Physical Review Letters, vol.107, issue.22, p.10, 1103. ,
DOI : 10.1038/nature10462
URL : https://hal.archives-ouvertes.fr/hal-00710242
Quantum Memory for Microwave Photons in an Inhomogeneously Broadened Spin Ensemble, Physical Review Letters, vol.110, issue.25, pp.1-5, 2013. ,
DOI : 10.1038/nphys2026
URL : https://hal.archives-ouvertes.fr/cea-01477724
Multimode Storage and Retrieval of Microwave Fields in a Spin Ensemble, Physical Review X, vol.4, issue.2, pp.1-9, 2014. ,
DOI : 10.1103/PhysRevLett.102.057403
URL : https://hal.archives-ouvertes.fr/hal-01340124
Gate-defined quantum dots in intrinsic silicon, Nano Letters, vol.7, pp.2051-2055, 2007. ,
A single-atom electron spin qubit in silicon, Nature, vol.489, pp.541-545, 2012. ,
Electrically controlling single-spin qubits in a continuous microwave field, Science Advances, vol.1, issue.3, p.1500022, 2015. ,
DOI : 10.1126/sciadv.1500022
URL : http://advances.sciencemag.org/content/1/3/e1500022.full.pdf
Single shot spin readout using a cryogenic highelectron-mobility transistor amplifier at sub-kelvin temperatures, Applied Physics Letters, vol.108, p.63101, 2016. ,
Hybrid optical???electrical detection of donor electron spins with bound excitons in silicon, Nature Materials, vol.14, issue.5, pp.490-494, 2015. ,
DOI : 10.1103/PhysRevLett.41.808
URL : http://arxiv.org/pdf/1411.1324
Formation of strain-induced quantum dots in gated semiconductor nanostructures, AIP Advances, vol.44, issue.8, p.87107, 2015. ,
DOI : 10.1063/1.4759248
URL : http://aip.scitation.org/doi/pdf/10.1063/1.4928320
Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28, Applied Physics Letters, vol.100, issue.17, pp.10-1063, 2012. ,
DOI : 10.1103/PhysRevB.68.193207
URL : http://arxiv.org/pdf/1202.1560
, Principles of Superconductive Devices and Circuits, 1999.
Thin Ohmic or superconducting strip with an applied ac electric current, Physical Review B, vol.73, issue.9, p.92511, 2006. ,
DOI : 10.1103/PhysRevB.49.9802
, Physical Review Applied, vol.6, issue.2, p.24021, 2016.
DOI : 10.1103/PhysRevB.90.100404
Magnetic Resonance with Squeezed Microwaves, Physical Review X, vol.7, issue.4, p.41011, 2017. ,
DOI : 10.1038/nature18327
URL : https://hal.archives-ouvertes.fr/hal-01666540
Inductive-detection electron-spin resonance spectroscopy with 65 spins/ Hz sensitivity, Applied Physics Letters, vol.111, issue.20, p.202604, 2017. ,
DOI : 10.1063/1.4769208
URL : https://hal.archives-ouvertes.fr/hal-01664352
Spin Echoes, Physical Review, vol.19, issue.4, pp.580-594, 1950. ,
DOI : 10.1063/1.1741290
Metal-semiconductor contacts, IEE Proceedings I -Solid-State and Electron Devices, p.1, 1982. ,
Hyperfine Stark effect of shallow donors in silicon, Physical Review B, vol.4, issue.19, p.195204, 2014. ,
DOI : 10.1038/nature10681
Coherent oscillations in silicon double quantum dots due to meissner-screened magnetic field gradients, Bulletin of the American Physical Society, vol.62, 2017. ,
Interaction of strain and nuclear spins in silicon: Quadrupolar effects on ionized donors, Physical Review Letters, vol.115, p.57601, 2015. ,
Quadrupolar effects on nuclear spins of neutral arsenic donors in silicon, Physical Review B, vol.93, p.161303, 2016. ,
Electroelastic Hyperfine Tuning of Phosphorus Donors in Silicon, Physical Review Letters, vol.106, issue.3, p.37601, 2011. ,
DOI : 10.1007/s10853-005-5912-x
Thermally-induced stresses in thin aluminum layers grown on silicon, Powder Diffraction, vol.45, issue.01, pp.74-76, 2004. ,
DOI : 10.1016/0956-7151(93)90155-L
Fundamentals of microfabrication: the science of miniaturization, 2002. ,
Recommended Values for the Thermal Expansivity of Silicon from 0 to 1000 K, Journal of Physical and Chemical Reference Data, vol.12, issue.2, pp.179-182, 1983. ,
DOI : 10.1063/1.555681
The Thermal Expansion of Pure Metals: Copper, Gold, Aluminum, Nickel, and Iron, Physical Review, vol.4, issue.8, p.597, 1941. ,
DOI : 10.1063/1.1745153
On the thermal expansion coefficients of thin films, Sensors and Actuators A: Physical, vol.84, issue.3, pp.310-314, 2000. ,
DOI : 10.1016/S0924-4247(00)00311-3
What is the young's modulus of silicon?, Journal of microelectromechanical systems, vol.19, pp.229-238, 2010. ,
Quadrupole shift of nuclear magnetic resonance of donors in silicon at low magnetic field, Nanotechnology, vol.27, issue.49, p.494001, 2016. ,
DOI : 10.1088/0957-4484/27/49/494001
The electric field gradient in noncubic metals, Reviews of Modern Physics, vol.51, p.161, 1979. ,
Electronic properties of two-dimensional systems, Reviews of Modern Physics, vol.21, issue.36, p.437, 1982. ,
DOI : 10.1103/PhysRev.148.741
Theory of Donor States in Silicon, Physical Review, vol.97, issue.4, p.915, 1955. ,
DOI : 10.1103/PhysRev.97.883
Electron Spin Resonance Experiments on Donors in Silicon. III. Investigation of Excited States by the Application of Uniaxial Stress and Their Importance in Relaxation Processes, Physical Review, vol.38, issue.4, p.1068, 1961. ,
DOI : 10.1103/PhysRev.38.2082.2
Linear Hyperfine Tuning of Donor Spins in Silicon Using Hydrostatic Strain, Physical Review Letters, vol.120, issue.16, 2017. ,
DOI : 10.1103/PhysRevB.89.235306
URL : https://doi.org/10.1103/physrevlett.120.167701
Stark tuning of donor electron spins in silicon, Physical Review Letters, vol.97, p.176404, 2006. ,
Noninvasive spatial metrology of single-atom devices, Nano Letters, vol.13, pp.1903-1909, 2013. ,