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Conference Papers Year : 2014

Spin-transfer torque magnetic memory as a stochastic memristive synapse

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Abstract

Spin-transfer torque magnetic memory (STT-MRAM) is currently under intense academic and industrial development, since it features nonvolatility, high write and read speed and high endurance. In this work, we show that when used in an original regime, it can additionally act as a stochastic memristive device, appropriate to implement a 'synaptic' function. We introduce basic concepts relating to STT-MRAM cell behavior and its possible use to implement learning-capable synapses. System-level simulations on a problem of car counting highlight the potential of the technology for learning systems. Monte Carlo simulations show its robustness to device variations. These results open the way for unexplored applications of STT-MRAM in robust, low power, cognitive-type systems.
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Dates and versions

cea-01817867 , version 1 (18-06-2018)

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Cite

A.F. Vincent, J. Larroque, W.S. Zhao, N.B. Romdhane, O. Bichler, et al.. Spin-transfer torque magnetic memory as a stochastic memristive synapse. 2014 IEEE International Symposium on Circuits and Systems (ISCAS), Jun 2014, Melbourne, VIC, Australia. pp.1074-1077, ⟨10.1109/ISCAS.2014.6865325⟩. ⟨cea-01817867⟩
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