. Ulmennb, . Desaiippd, M. Moghaddamms, and M. , Development of diode junction nuclear battery using Ni-63, J. Radioanal. Nucl. Chem, pp.282601-282605, 2009.

O. Kuruogluun and . Bozkurttk, Betavoltaic study of a GaN p-i-n structure grown by metal-organic vapour phase epitaxy with a Ni-63 source Thin Solid Films, pp.636746-50, 2017.

. Chenggzzj, . Sannhhs, . Fenggzzh, and C. Liuub, Electron. Lett, pp.47720-47721, 2011.

C. Chenggz and S. , FenggZ and LiuuB 2012 A high open-circuit voltage gallium nitride betavoltaic microbattery, J. Micromech. Microeng, vol.22, p.74011

-. Chenggz, -. Sannh, -. Chennx, L. Fenggz, and -. , GaN betavoltaic microbattery Chin. Phys. Lett, vol.28, p.78401, 2011.

Y. Sannh, . Wanggx, and C. Chenggz, Design and simulation of gan based schottky betavoltaic nuclear microbattery, Appl. Radiat. Isot, pp.8017-8039, 2013.

. Chandrashekharrm, . Thomassc, . Liih, and L. Spencerrm, 4H SiC betavoltaic cell Appl. Phys. Lett, p.88, 2006.

L. Gaooh and W. Zhanggh, , pp.51116-51138, 2013.

. Wanggg, . Huur, . Weiih, . Zhanggh, . Yanggy et al., Appl. Radiat. Isot, pp.682214-682221, 2010.

A. Munsonnc, . Strequeej, . Belahsenees, . Martinezza, E. Ramdaneea et al., VosssP and OugazzadennA 2015 Model of Ni-63 battery with realistic PIN structure, J. Appl. Phys, vol.118, p.105101

L. Tanggx and C. Dinggd, Optimization design of gan betavoltaic microbattery Sci. China Technol. Sci, pp.55659-64, 2012.

D. Honsberggc, A. , and W. , GaN betavoltaic energy converters Conf. Record of the Thirthy-First IEEE Photovoltaics Specialists Conf. pp 102-5 (IEEE Electron Devices Soc IEEE 2005 31st IEEE Photovoltaic Specialists Conf, pp.3-07, 2005.

, OlsennL 1993 Review of betavoltaic energy conversion NASA Conf, p.256

. Srourrh, . Salvestriniij, . Ahaitouffa, . Gautierrs, . Moudakirrt et al., Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices, Appl. Phys. Lett, p.99221101, 2011.

. Ravindrannv, . Boucherittm, . Soltaniia, . Gautierrs, . Moudakirrt et al., Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors, Appl. Phys. Lett, p.100243503, 2012.