Modeling, design, fabrication and experimentation of a GaN-based, $^{63}$Ni betavoltaic battery

Abstract : GaN is a durable, radiation hard and wide-bandgap semiconductor material, making it ideal for usage with betavoltaic batteries. This paper describes the design, fabrication and experimental testing of 1 cm$^2$ GaN-based betavoltaic batteries (that achieve an output power of 2.23 nW) along with a full model that accurately simulates the device performance which is the highest to date (to the best of our knowledge) for GaN-based devices with a $^{Ni}$63 source.
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Submitted on : Thursday, January 10, 2019 - 12:55:30 PM
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C Munson, Q. Gaimard, K Merghem, S. Sundaram, J. Rogers, et al.. Modeling, design, fabrication and experimentation of a GaN-based, $^{63}$Ni betavoltaic battery. Journal of Physics D: Applied Physics, IOP Publishing, 2018, 51 (3), pp.035101. ⟨10.1088/1361-6463/aa9e41⟩. ⟨cea-01765048⟩

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