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Modeling, design, fabrication and experimentation of a GaN-based, 63Ni betavoltaic battery

C Munson 1, 2 Q. Gaimard 3 Kamel Merghem 3 S. Sundaram 1 J. Rogers 4 Jacques Sanoit (de) 5 P Voss 1, 2 A. Ramdane 3 Jean-Paul Salvestrini 1, 2 A. Ougazzaden 1, 2
1 UMI2958 - Georgia Tech - CNRS [Metz]
2 Georgia Institute of Technology [Atlanta]
3 LPN - Laboratoire de photonique et de nanostructures
4 Nanovation - Nanovation SARL
5 LCD-LIST - Laboratoire Capteurs Diamant
DM2I - Département Métrologie Instrumentation & Information : DRT/LIST/DM2I
Abstract : GaN is a durable, radiation hard and wide-bandgap semiconductor material, making it ideal for usage with betavoltaic batteries. This paper describes the design, fabrication and experimental testing of 1 cm$^2$ GaN-based betavoltaic batteries (that achieve an output power of 2.23 nW) along with a full model that accurately simulates the device performance which is the highest to date (to the best of our knowledge) for GaN-based devices with a $^{Ni}$63 source.
Keywords : betavoltaic battery GaN $^{Ni}$63
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C Munson, Q. Gaimard, Kamel Merghem, S. Sundaram, J. Rogers, et al.. Modeling, design, fabrication and experimentation of a GaN-based, 63Ni betavoltaic battery. Journal of Physics D: Applied Physics, IOP Publishing, 2018, 51 (3), pp.035101. ⟨10.1088/1361-6463/aa9e41⟩. ⟨cea-01765048⟩

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