Controlling the spin-torque efficiency with ferroelectric barriers

A. Useinov 1 Mairbek Chshiev 2 Aurelien Manchon 1, *
* Corresponding author
1 KAUST - King Abdullah University of Science and Technology
2 SPINTEC - SPINtronique et TEchnologie des Composants
Abstract : Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrodinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and relatedmagnetic noise in spin transfer devices.
Keywords : Magnetic Tunnel-Junctions Room-Temperature Voltage-Dependence Electroresistance Magnetoresistance
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Journal articles
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https://hal-cea.archives-ouvertes.fr/cea-01745395
Contributor : Jérôme Planès <>
Submitted on : Wednesday, March 28, 2018 - 10:57:02 AM
Last modification on : Thursday, April 4, 2019 - 9:44:02 AM

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A. Useinov, Mairbek Chshiev, Aurelien Manchon. Controlling the spin-torque efficiency with ferroelectric barriers. Physical Review B : Condensed matter and materials physics, American Physical Society, 2015, 91, pp.064412. ⟨10.1103/PhysRevB.91.064412⟩. ⟨cea-01745395⟩

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