Nanometre-scale electronics with III???V compound semiconductors, Nature, vol.38, issue.7373, pp.317-323, 2011. ,
DOI : 10.1063/1.3050466
Roadmap for 22nm and beyond (Invited Paper), Microelectronic Engineering, vol.86, issue.7-9, pp.1520-1528, 2009. ,
DOI : 10.1016/j.mee.2009.03.129
Three dimensional reciprocal space measurement by x-ray diffraction using linear and area detectors: Applications to texture and defects determination in oriented thin films and nanoprecipitates, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.31, issue.2, p.21505, 2013. ,
DOI : 10.1116/1.4789984
An off-normal fibre-like texture in thin films on single-crystal substrates, Nature, vol.16, issue.6967, pp.641-645, 2003. ,
DOI : 10.1046/j.1365-2818.1998.3070861.x
Self-Aligned NiGeSi Contacts on Gallium Arsenide for III-V MOSFETs, ECS Trans, vol.33, issue.6, pp.1021-1028, 2010. ,
Metallurgical study of Ni/GaAs contacts. II. Interfacial reactions of Ni thin films on (111) and (001) GaAs, Journal of Applied Physics, vol.241, issue.5, pp.2129-2136, 1989. ,
DOI : 10.1016/0040-6090(82)90093-1
Full 3D reciprocal space map of thin polycrystalline films for microelectronic applications, 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015. ,
DOI : 10.1109/IITC-MAM.2015.7325624
Crystal structure and epitaxial relationship of Ni 4 InGaAs 2 films formed on InGaAs by annealing, J ,
As: Structural and chemical study, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol.31, issue.3, p.31205, 2013. ,
DOI : 10.1116/1.4802917
A Self-Aligned Ni-InGaAs Contact Technology for InGaAs Channel n-MOSFETs, Journal of The Electrochemical Society, vol.2008, issue.5, pp.511-515, 2012. ,
DOI : 10.1149/2.020201jes