Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping

S. Zhiou; Philippe Rodriguez; Patrice Gergaud; Fabrice Nemouchi; Thanh Tra Nguyen

doi:10.1109/IITC-MAM.2015.7325627

Conference papers

Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping

S. Zhiou ¹ Philippe Rodriguez ¹ Patrice Gergaud ¹ Fabrice Nemouchi ¹ Thanh Tra Nguyen ²

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

2 CRG - CRG et Grands Instruments

NEEL - Institut Néel

Abstract : We studied the solid-state reaction of Ni thin films with InGaAs layers grown on InP or Si substrates. The inter-metallics obtained carried an hexagonal structure, but yielded a difference in orientation regarding either the substrates or the annealing temperature.

Document type :

Conference papers

Domain :

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

Complete list of metadatas

Cited literature [10 references] Display Hide Download

https://hal-cea.archives-ouvertes.fr/cea-01615661
Contributor : Philippe Rodriguez <>
Submitted on : Thursday, October 12, 2017 - 4:19:37 PM
Last modification on : Friday, December 18, 2020 - 1:12:03 PM

ZHIOU SEIFEDDINE_MAM2015_Regul...

Files produced by the author(s)

Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping

File

Identifiers

Collections

Citation

Export

Metrics

296

518

Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping

File

Identifiers

Collections

Citation

Export

Share

Metrics

296

518