Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping

S. Zhiou; Philippe Rodriguez; Patrice Gergaud; Fabrice Nemouchi; Thanh Tra Nguyen

doi:10.1109/IITC-MAM.2015.7325627

Conference papers

Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping

S. Zhiou ¹ Philippe Rodriguez ¹ Patrice Gergaud ¹ Fabrice Nemouchi ¹ Thanh Tra Nguyen ²

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

2 CRG - CRG et Grands Instruments

NEEL - Institut Néel

Abstract : We studied the solid-state reaction of Ni thin films with InGaAs layers grown on InP or Si substrates. The inter-metallics obtained carried an hexagonal structure, but yielded a difference in orientation regarding either the substrates or the annealing temperature.

Document type :

Conference papers

Domain :

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

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Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping

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Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping

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