Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping - Archive ouverte HAL Access content directly
Conference Papers Year : 2015

Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping

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Abstract

We studied the solid-state reaction of Ni thin films with InGaAs layers grown on InP or Si substrates. The inter-metallics obtained carried an hexagonal structure, but yielded a difference in orientation regarding either the substrates or the annealing temperature.
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cea-01615661 , version 1 (12-10-2017)

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S. Zhiou, Philippe Rodriguez, Patrice Gergaud, Fabrice Nemouchi, Thanh Tra Nguyen. Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping. 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), May 2015, Grenoble, France. pp.63 - 66, ⟨10.1109/IITC-MAM.2015.7325627⟩. ⟨cea-01615661⟩
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