Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping

S. Zhiou; Philippe Rodriguez; Patrice Gergaud; Fabrice Nemouchi; Thanh Tra Nguyen

doi:10.1109/IITC-MAM.2015.7325627

Conference papers

Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping

S. Zhiou ¹ Philippe Rodriguez ¹ Patrice Gergaud ¹ Fabrice Nemouchi ¹ Thanh Tra Nguyen ²

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

2 CRG [2007-2015] - CRG et Grands Instruments [2007-2015]

NEEL [2007-2015] - Institut Néel [2007-2015]

Abstract : We studied the solid-state reaction of Ni thin films with InGaAs layers grown on InP or Si substrates. The inter-metallics obtained carried an hexagonal structure, but yielded a difference in orientation regarding either the substrates or the annealing temperature.

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Conference papers

Domain :

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

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Submitted on : Thursday, October 12, 2017 - 4:19:37 PM
Last modification on : Wednesday, October 14, 2020 - 3:49:21 AM

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Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping

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Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping

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