Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping

Abstract : We studied the solid-state reaction of Ni thin films with InGaAs layers grown on InP or Si substrates. The inter-metallics obtained carried an hexagonal structure, but yielded a difference in orientation regarding either the substrates or the annealing temperature.
Type de document :
Communication dans un congrès
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), May 2015, Grenoble, France. pp.63 - 66, 2015, 〈10.1109/IITC-MAM.2015.7325627〉
Liste complète des métadonnées

Littérature citée [10 références]  Voir  Masquer  Télécharger

https://hal-cea.archives-ouvertes.fr/cea-01615661
Contributeur : Philippe Rodriguez <>
Soumis le : jeudi 12 octobre 2017 - 16:19:37
Dernière modification le : lundi 24 septembre 2018 - 10:56:04

Fichier

ZHIOU SEIFEDDINE_MAM2015_Regul...
Fichiers produits par l'(les) auteur(s)

Identifiants

Collections

CEA | DRT | UGA | NEEL | LETI

Citation

S. Zhiou, Philippe Rodriguez, Patrice Gergaud, Fabrice Nemouchi, Thanh-Tra Nguyen. Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping. 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), May 2015, Grenoble, France. pp.63 - 66, 2015, 〈10.1109/IITC-MAM.2015.7325627〉. 〈cea-01615661〉

Partager

Métriques

Consultations de la notice

127

Téléchargements de fichiers

15