Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping

S. Zhiou (1) , Philippe Rodriguez (1) , Patrice Gergaud (1) , Fabrice Nemouchi (1) , Thanh Tra Nguyen (2)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 NEEL - CRG - CRG & Grands instruments

We studied the solid-state reaction of Ni thin films with InGaAs layers grown on InP or Si substrates. The inter-metallics obtained carried an hexagonal structure, but yielded a difference in orientation regarding either the substrates or the annealing temperature.

Domains: Micro and nanotechnologies/Microelectronics

S. Zhiou, Philippe Rodriguez, Patrice Gergaud, Fabrice Nemouchi, Thanh Tra Nguyen. Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping. 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), May 2015, Grenoble, France. pp.63 - 66, ⟨10.1109/IITC-MAM.2015.7325627⟩. ⟨cea-01615661⟩