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Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping

Abstract : We studied the solid-state reaction of Ni thin films with InGaAs layers grown on InP or Si substrates. The inter-metallics obtained carried an hexagonal structure, but yielded a difference in orientation regarding either the substrates or the annealing temperature.
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https://hal-cea.archives-ouvertes.fr/cea-01615661
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Submitted on : Thursday, October 12, 2017 - 4:19:37 PM
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S. Zhiou, Philippe Rodriguez, Patrice Gergaud, Fabrice Nemouchi, Thanh Tra Nguyen. Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In$_{0.53}$Ga$_{0.47}$As under-layer by means of full 3D reciprocal space mapping. 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), May 2015, Grenoble, France. pp.63 - 66, ⟨10.1109/IITC-MAM.2015.7325627⟩. ⟨cea-01615661⟩

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