Contacts for Monolithic 3D architecture: Study of Ni$_{0.9}$Co$_{0.1}$ Silicide Formation

Abstract : In this work, we studied the solid-state reaction between a Ni$_{0.9}$Co$_{0.1}$ film and a silicon substrate. NiCo silicide is considered to substitute Ni-and NiPt-based silicides in 3D integration in order to extend the bottom transistor thermal stability. Thanks to the combined analysis of sheet resistance data, X-ray reflectivity spectra modelling, X-ray diffraction and wavelength dispersive X-ray fluorescence analyses on Ni$_{0.9}$Co$_{0.1}$ /Si samples annealed at various temperatures, we were able to describe the phase sequence of the NiCo silicide formation.
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Communication dans un congrès
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), May 2016, San Jose, United States. 2016, 〈10.1109/IITC-AMC.2016.7507685〉
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Soumis le : jeudi 12 octobre 2017 - 15:59:40
Dernière modification le : mercredi 14 février 2018 - 14:05:04

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Philippe Rodriguez, S. Favier, F Nemouchi, C Sésé, F Deprat, et al.. Contacts for Monolithic 3D architecture: Study of Ni$_{0.9}$Co$_{0.1}$ Silicide Formation. 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), May 2016, San Jose, United States. 2016, 〈10.1109/IITC-AMC.2016.7507685〉. 〈cea-01615601〉

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