Simple ohmic contacts on gallium arsenide, Solid-State Electronics, vol.6, issue.4, pp.388-389, 1963. ,
DOI : 10.1016/0038-1101(63)90104-7
Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance, IEEE Transactions on Electron Devices, vol.55, issue.1, pp.21-39, 2008. ,
DOI : 10.1109/TED.2007.911034
III-V MOSFETs: Surface Passivation, Source/Drain and Channel Strain Engineering , Self-Aligned Contact Metallization, ECS Trans, vol.35, issue.3, pp.351-361, 2011. ,
DOI : 10.1149/1.3569928
Prospective and Critical Issues of III-V/Ge CMOS on Si Platform, ECS Trans, vol.35, issue.3, pp.279-298, 2011. ,
DOI : 10.1149/1.3569921
In[sub 0.7]Ga[sub 0.3]As Channel n-MOSFET with Self-Aligned Ni???InGaAs Source and Drain, Electrochemical and Solid-State Letters, vol.2009, issue.2, pp.60-62, 2011. ,
DOI : 10.1116/1.1306283
URL : https://hal.archives-ouvertes.fr/in2p3-00441076
CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53 Ga 0.47 As n-MOSFETs, Solid-State Electron, vol.78, pp.62-67, 2012. ,
Characterization of wet-etched GaAs (100) surfaces, Surface and Interface Analysis, vol.19, issue.194, pp.673-682, 2005. ,
DOI : 10.1002/9783527613786
Interfacial Chemistry of InP/GaAs Bonded Pairs, Journal of Electronic Materials, vol.109, issue.55, pp.179-190, 2007. ,
DOI : 10.1007/s11664-006-0077-1