In situ cleaning/passivation of surfaces for contact technology on III-V materials - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Accéder directement au contenu
Communication Dans Un Congrès Année : 2015

In situ cleaning/passivation of surfaces for contact technology on III-V materials

Résumé

In this work we introduce the use of physical plasmas (e.g. Ar-and He-based plasmas) in order to study the in situ cleaning (prior to metal deposition) of InGaAs layers dedicated to the realisation of self-aligned contacts. For the characterisation of cleaning efficiency, we performed surface analyses like X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy in attenuated total reflection mode. The first results described in this work are encouraging. We have found efficient processes for removing totally or partially III-V native oxides.
Fichier principal
Vignette du fichier
Ph.Rodriguez.MAM2015.pdf (954.6 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

cea-01615586 , version 1 (12-10-2017)

Identifiants

Citer

Philippe Rodriguez, Laura Toselli, Elodie Ghegin, Fabrice Nemouchi, Névine Rochat, et al.. In situ cleaning/passivation of surfaces for contact technology on III-V materials. 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), May 2015, Grenoble, France. pp.107 - 110, ⟨10.1109/IITC-MAM.2015.7325643⟩. ⟨cea-01615586⟩
41 Consultations
151 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More