HAL will be down for maintenance from Friday, June 10 at 4pm through Monday, June 13 at 9am. More information
Skip to Main content Skip to Navigation
Conference papers

In situ cleaning/passivation of surfaces for contact technology on III-V materials

Abstract : In this work we introduce the use of physical plasmas (e.g. Ar-and He-based plasmas) in order to study the in situ cleaning (prior to metal deposition) of InGaAs layers dedicated to the realisation of self-aligned contacts. For the characterisation of cleaning efficiency, we performed surface analyses like X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy in attenuated total reflection mode. The first results described in this work are encouraging. We have found efficient processes for removing totally or partially III-V native oxides.
Complete list of metadata

Cited literature [8 references]  Display  Hide  Download

https://hal-cea.archives-ouvertes.fr/cea-01615586
Contributor : Philippe Rodriguez Connect in order to contact the contributor
Submitted on : Thursday, October 12, 2017 - 3:52:40 PM
Last modification on : Monday, March 29, 2021 - 2:43:56 PM

File

Ph.Rodriguez.MAM2015.pdf
Files produced by the author(s)

Identifiers

Collections

CEA | DRT | LETI | CEA-GRE | ANR

Citation

Philippe Rodriguez, Laura Toselli, Elodie Ghegin, Fabrice Nemouchi, Névine Rochat, et al.. In situ cleaning/passivation of surfaces for contact technology on III-V materials. 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), May 2015, Grenoble, France. pp.107 - 110, ⟨10.1109/IITC-MAM.2015.7325643⟩. ⟨cea-01615586⟩

Share

Metrics

Record views

30

Files downloads

122