In situ cleaning/passivation of surfaces for contact technology on III-V materials

Philippe Rodriguez; Laura Toselli; Elodie Ghegin; Fabrice Nemouchi; Névine Rochat; Eugenie Martinez

In situ cleaning/passivation of surfaces for contact technology on III-V materials

Philippe Rodriguez ¹ Laura Toselli ¹ Elodie Ghegin ^{2, 1} Fabrice Nemouchi ¹ Névine Rochat ¹ Eugenie Martinez ¹

1 CEA-LETI - Laboratoire d'Electronique et des Technologies de l'Information

2 ST-CROLLES - STMicroelectronics [Crolles]

Abstract : In this work we introduce the use of physical plasmas (e.g. Ar-and He-based plasmas) in order to study the in situ cleaning (prior to metal deposition) of InGaAs layers dedicated to the realisation of self-aligned contacts. For the characterisation of cleaning efficiency, we performed surface analyses like X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy in attenuated total reflection mode. The first results described in this work are encouraging. We have found efficient processes for removing totally or partially III-V native oxides.

Document type :

Conference papers

Domain :

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

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https://hal-cea.archives-ouvertes.fr/cea-01615586
Contributor : Philippe Rodriguez <>
Submitted on : Thursday, October 12, 2017 - 3:52:40 PM
Last modification on : Monday, February 25, 2019 - 4:34:20 PM

Ph.Rodriguez.MAM2015.pdf

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