In situ cleaning/passivation of surfaces for contact technology on III-V materials

Philippe Rodriguez 1 Laura Toselli 1 Elodie Ghegin 2, 1 Fabrice Nemouchi 1 Névine Rochat 1 Eugenie Martinez 1
1 CEA-LETI - Laboratoire d'Electronique et des Technologies de l'Information
2 ST-CROLLES - STMicroelectronics [Crolles]
Abstract : In this work we introduce the use of physical plasmas (e.g. Ar-and He-based plasmas) in order to study the in situ cleaning (prior to metal deposition) of InGaAs layers dedicated to the realisation of self-aligned contacts. For the characterisation of cleaning efficiency, we performed surface analyses like X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy in attenuated total reflection mode. The first results described in this work are encouraging. We have found efficient processes for removing totally or partially III-V native oxides.
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Communication dans un congrès
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), May 2015, Grenoble, France. pp.107 - 110, 2015, 〈10.1109/IITC-MAM.2015.7325643〉
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Soumis le : jeudi 12 octobre 2017 - 15:52:40
Dernière modification le : mercredi 14 février 2018 - 14:05:00

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Philippe Rodriguez, Laura Toselli, Elodie Ghegin, Fabrice Nemouchi, Névine Rochat, et al.. In situ cleaning/passivation of surfaces for contact technology on III-V materials. 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), May 2015, Grenoble, France. pp.107 - 110, 2015, 〈10.1109/IITC-MAM.2015.7325643〉. 〈cea-01615586〉

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