S. Takagi, T. Iisawa, T. Tezuka, T. Numata, S. Nakaharai et al., Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance, IEEE Transactions on Electron Devices, vol.55, issue.1, pp.21-39, 2008.
DOI : 10.1109/TED.2007.911034

. Basso, Silicide pre-clean effects on NiPtSi thermal stability for 65 nm technologies and beyond, Microelectron. Eng, vol.84, issue.11, pp.2528-2532, 2007.

M. R. Vilar, J. Beghdadi, F. Debontridder, R. Artzi, R. Naaman et al., Characterization of wet-etched GaAs (100) surfaces, Surface and Interface Analysis, vol.19, issue.194, pp.673-682, 2005.
DOI : 10.1002/9783527613786

N. Liu and T. F. Kuech, Interfacial Chemistry of InP/GaAs Bonded Pairs, Journal of Electronic Materials, vol.109, issue.55, pp.179-190, 2007.
DOI : 10.1007/s11664-006-0077-1

E. Kawamura, V. Vahedi, M. A. Lieberman, and C. K. Birdsall, Ion energy distributions in rf sheaths; review, analysis and simulation, Plasma Sources Science and Technology, vol.8, issue.3, p.45, 1999.
DOI : 10.1088/0963-0252/8/3/202

B. Brennan and G. Hughes, Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission, Journal of Applied Physics, vol.108, issue.5, p.53516, 2010.
DOI : 10.1016/j.apsusc.2004.06.012