J. A. Del-alamo, Nanometre-scale electronics with III???V compound semiconductors, Nature, vol.38, issue.7373, p.317, 2011.
DOI : 10.1063/1.3050466

X. Zhang, H. Guo, X. Gong, Q. Zhou, and Y. Lin, In[sub 0.7]Ga[sub 0.3]As Channel n-MOSFET with Self-Aligned Ni???InGaAs Source and Drain, Electrochemical and Solid-State Letters, vol.2009, issue.2, p.60, 2011.
DOI : 10.1116/1.1306283
URL : https://hal.archives-ouvertes.fr/in2p3-00441076

D. Liang and J. E. Bowers, Recent progress in lasers on silicon, Nature Photonics, vol.4, issue.8, p.511, 2010.
DOI : 10.1109/JPROC.2009.2014298

D. Cuypers, S. De-gendt, S. Arnauts, K. Paulussen, and D. H. Van-dorp, Wet Chemical Etching of InP for Cleaning Applications: I. An Oxide Formation/Oxide Dissolution Model, ECS Journal of Solid State Science and Technology, vol.2, issue.4, p.185, 2013.
DOI : 10.1149/2.020304jss

S. Osakabe and S. Adachi, Study of GaAs(001) Surfaces Treated in Aqueous HCl Solutions, Japanese Journal of Applied Physics, vol.36, issue.Part 1, No. 12A, p.7119, 1997.
DOI : 10.1143/JJAP.36.7119

D. H. Van-dorp, S. Arnauts, D. Cuypers, J. Rip, F. Holsteyns et al., Nanoscale Etching of In0.53Ga0.47As in H2O2/HCl Solutions for Advanced CMOS Processing, ECS Journal of Solid State Science and Technology, vol.3, issue.6, p.179, 2014.
DOI : 10.1149/2.021405jss

D. Kikuchi, Y. Matsui, and S. Adachi, Chemically Treated InP(100) Surfaces in Aqueous HCl Solutions, Journal of The Electrochemical Society, vol.147, issue.5, p.1973, 2000.
DOI : 10.1149/1.1393469

Y. Sun, Z. Liu, F. Machuca, P. Pianetta, and W. E. Spicer, Preparation of clean InP(100) surfaces studied by synchrotron radiation photoemission, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.21, issue.1, p.219, 2003.
DOI : 10.1116/1.1532738

M. R. Vilar, J. Beghdadi, F. Debontridder, R. Artzi, R. Naaman et al., Characterization of wet-etched GaAs (100) surfaces, Surface and Interface Analysis, vol.19, issue.194, p.673, 2005.
DOI : 10.1002/9783527613786

N. Liu and T. F. Kuech, Changes in interfacial bonding energies in the chemical activation of GaAs surfaces, Journal of Electronic Materials, vol.193, issue.194, p.1010, 2005.
DOI : 10.1021/jp003409j

N. Liu and T. F. Kuech, Interfacial Chemistry of InP/GaAs Bonded Pairs, Journal of Electronic Materials, vol.109, issue.55, p.179, 2007.
DOI : 10.1007/s11664-006-0077-1

B. Brennan and G. Hughes, Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission, Journal of Applied Physics, vol.108, issue.5, p.53516, 2010.
DOI : 10.1016/j.apsusc.2004.06.012

P. Pianetta, I. Lindau, C. M. Garner, and W. E. Spicer, Chemisorption and oxidation studies of the (110) surfaces of GaAs, GaSb, and InP, Physical Review B, vol.30, issue.6, p.2792, 1978.
DOI : 10.1103/PhysRevLett.30.846

P. A. Bertrand and J. , XPS study of chemically etched GaAs and InP, Journal of Vacuum Science and Technology, vol.18, issue.1, p.28, 1981.
DOI : 10.1116/1.570694

N. Shibata and H. Ikoma, X-Ray Photoelectron Spectroscopic Study of Oxidation of InP, Japanese Journal of Applied Physics, vol.31, issue.Part 1, No. 12A, p.3976, 1992.
DOI : 10.1143/JJAP.31.3976

O. Pluchery, Y. J. Chabal, and R. L. Opila, infrared spectroscopy, Journal of Applied Physics, vol.15, issue.4, p.2707, 2003.
DOI : 10.1103/PhysRevLett.81.3908
URL : https://hal.archives-ouvertes.fr/hal-01238975

M. Yamaguchi, Reply to ??????Comments on ???Thermal oxidation of InP and properties of oxide film????????????, Journal of Applied Physics, vol.51, issue.3, p.1834, 1982.
DOI : 10.1063/1.327498

D. Ilieva, D. Kovacheva, C. Petkov, and G. Bogachev, Vibrational spectra of R(PO3)3 metaphosphates (R = Ga, In, Y, Sm, Gd, Dy), Journal of Raman Spectroscopy, vol.195, issue.1, p.893, 2001.
DOI : 10.1016/0022-3093(95)00524-2

J. E. Griffiths, G. P. Schwartz, W. A. Sunder, and H. Schonhorn, Comment on ??????Thermal oxidation of InP and properties of oxide film??????, Journal of Applied Physics, vol.24, issue.3, p.1832, 1982.
DOI : 10.1063/1.327302

J. E. Maslar, P. W. Bohn, D. G. Ballegeer, E. Andideh, I. Adesida et al., ???InP studied by Raman scattering, Journal of Applied Physics, vol.1392, issue.6, p.2983, 1993.
DOI : 10.1117/12.48951

J. S. Pan, A. T. Wee, C. H. Huan, H. S. Tan, and K. L. Tan, ion bombardment, Journal of Applied Physics, vol.32, issue.12, p.6655, 1996.
DOI : 10.1103/PhysRev.187.768