Cleaning of InGaAs and InP Layers for Nanoelectronics and Photonics Contact Technology Applications

Philippe Rodriguez 1 L. Toselli 1 E. Ghegin 2, 1 M. Rebaud 1 Névine Rochat 1 N. Chevalier 1 E. Martinez 1 F. Nemouchi 1
1 CEA-LETI - Laboratoire d'Electronique et des Technologies de l'Information
2 ST-CROLLES - STMicroelectronics [Crolles]
Abstract : InGaAs and InP layers were treated by using Ar and He direct plasmas coupled with wet chemical treatments. InP surfaces are more sensitive to the various treatments than the InGaAs ones. Suitable and efficient treatments have been proposed to offer a good compromise between impact on surface and native oxide removal. We have demonstrated that concentrated HCl solution cleanings followed by He direct plasma treatment are efficient for the removal of InGaAs native oxides whereas He plasma exposure combined to a diluted HCl solution cleaning is more suitable for InP surfaces.
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ECS Transactions, Electrochemical Society, Inc., 2015, 69, pp.251 - 259. 〈10.1149/06908.0251ecst〉
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Soumis le : jeudi 12 octobre 2017 - 15:14:06
Dernière modification le : lundi 24 septembre 2018 - 10:56:04

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Philippe Rodriguez, L. Toselli, E. Ghegin, M. Rebaud, Névine Rochat, et al.. Cleaning of InGaAs and InP Layers for Nanoelectronics and Photonics Contact Technology Applications. ECS Transactions, Electrochemical Society, Inc., 2015, 69, pp.251 - 259. 〈10.1149/06908.0251ecst〉. 〈cea-01615547〉

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