Jurczak , 1010 Nm 2 HF/HfO x crossbar resistive RAM with excellent performance , reliability and low-energy operation, Technical Digest -International Electron Devices Meeting, IEDM, pp.729-732, 2011. ,
DOI : 10.1109/iedm.2011.6131652
-based resistive switching structures, Nanotechnology, vol.24, issue.8, pp.10-1088, 2013. ,
DOI : 10.1088/0957-4484/24/8/085706
URL : https://hal.archives-ouvertes.fr/hal-00522685
-Based RRAM and Impact of Doping/Alloying, IEEE Transactions on Electron Devices, vol.62, issue.12, pp.4029-4036, 2015. ,
DOI : 10.1109/TED.2015.2490545
Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes, Nature Communications, vol.12, p.10, 1038. ,
DOI : 10.1107/S0909049505012719
URL : http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4992164
Nanoionics-based resistive switching memories, Nature Materials, vol.18, issue.11, pp.833-840, 1038. ,
DOI : 10.1155/APEC.3.217
Applications of high lateral and energy resolution imaging XPS with a double hemispherical analyser based spectromicroscope, Journal of Electron Spectroscopy and Related Phenomena, vol.178, issue.179, pp.178-179, 2010. ,
DOI : 10.1016/j.elspec.2009.06.001
Laboratory based X-ray photoemission core-level spectromicroscopy of resistive oxide memories, Please cite this article as, 2017. ,
DOI : 10.1016/j.ultramic.2017.03.026
URL : https://hal.archives-ouvertes.fr/cea-01591611
Core level photoelectron spectromicroscopy with Al K??1 excitation at 500nm spatial resolution, Journal of Electron Spectroscopy and Related Phenomena, vol.171, issue.1-3, pp.68-71, 2009. ,
DOI : 10.1016/j.elspec.2009.03.008
at Different Ion Energies, by XPS: Part 1 - Monoatomic Ions, Surface Science Spectra, vol.21, issue.1, pp.50-67, 1116. ,
DOI : 10.1116/11.20140701
at Different Ion Energies, by XPS: Part 2 - Cluster Ions, XPS: part 2 cluster ions, pp.68-83, 2014. ,
DOI : 10.1116/11.20140702
Clusters: Elucidating Chain Size and Projectile Effects with Molecular Dynamics, The Journal of Physical Chemistry C, vol.119, issue.46, pp.25868-25879, 2015. ,
DOI : 10.1021/acs.jpcc.5b07007
Nanoesca: imaging {UPS} and {XPS} with high energy resolution Gries, A universal predictive equation for the inelastic mean free pathlengths of x-ray photoelectrons and auger electrons, Proceeding of the Fourteenth International Conference on Vacuum Ultraviolet Radiation PhysicsAID-SIA84 3.0.CO, pp.1179-1182, 1996. ,
Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3, Proceedings of the ninth european workshop on materials for advanced metallization 2005, pp.248-253, 2005. ,
DOI : 10.1016/j.mee.2005.07.083
Resistive switching of HfO2-based Metal???Insulator???Metal diodes: Impact of the top electrode material, Proceedings of the {EMRS} 2011 Spring Meeting Symposium D: Synthesis, Processing and Characterization of Nanoscale Multi Functional Oxide Films {III}, pp.4551-4555, 2012. ,
DOI : 10.1016/j.tsf.2011.10.183
URL : https://hal.archives-ouvertes.fr/hal-00777820
Titanium nitride oxidation chemistry: An x???ray photoelectron spectroscopy study, Journal of Applied Physics, vol.1, issue.7, pp.3072-3079, 1992. ,
DOI : 10.1116/1.577661
Origin of resistivity change in NiO thin films studied by hard x-ray photoelectron spectroscopy, Journal of Applied Physics, vol.109, issue.12, pp.10-16, 2011. ,
DOI : 10.1063/1.3170353
Laboratory based X-ray photoemission core-level spectromicroscopy of resistive oxide memories, Please cite this article as, 2017. ,
DOI : 10.1016/j.ultramic.2017.03.026
URL : https://hal.archives-ouvertes.fr/cea-01591611