Laboratory based X-ray photoemission core-level spectromicroscopy of resistive oxide memories - Archive ouverte HAL Access content directly
Journal Articles Ultramicroscopy Year : 2017

Laboratory based X-ray photoemission core-level spectromicroscopy of resistive oxide memories

(1) , (2) , (1) , (1) , (2) , (2) , (2) , (2) , (2) , (1)
1
2

Abstract

HfO$_2$-based resistive oxide memories are studied by core-level spectromicroscopy using a laboratory-based X-ray photoelectron emission microscope (XPEEM). After forming, the top electrode is thinned to about 1 nm for the XPEEM analysis, making the buried electrode/HfO$_2$ interface accessible whilst preserving it from contamination. The results are obtained in the true photoemission channel mode from individual memory cells (5 × 5 μm) excited by low-flux laboratory X-rays, in contrast to most studies employing the X-ray absorption channel using potentially harmful bright synchrotron X-rays. Analysis of the local Hf 4f, O 1s and Ti 2p core level spectra yields valuable information on the chemistry of the forming process in a single device, and in particular the central role of oxygen vacancies thanks to the spectromicroscopic approach.
Fichier principal
Vignette du fichier
1-s2.0-S0304399116303576-main.pdf (1.48 Mo) Télécharger le fichier
Origin : Publisher files allowed on an open archive
Loading...

Dates and versions

cea-01591611 , version 1 (21-09-2017)

Identifiers

Cite

Daniel M. Gottlob, Eugénie Martinez, Claire Mathieu, Christophe Lubin, Nicolas Chevalier, et al.. Laboratory based X-ray photoemission core-level spectromicroscopy of resistive oxide memories. Ultramicroscopy, 2017, 4, pp.1 - 5. ⟨10.1016/j.ultramic.2017.03.026⟩. ⟨cea-01591611⟩
192 View
289 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More