Laboratory based X-ray photoemission core-level spectromicroscopy of resistive oxide memories

Abstract : HfO$_2$-based resistive oxide memories are studied by core-level spectromicroscopy using a laboratory-based X-ray photoelectron emission microscope (XPEEM). After forming, the top electrode is thinned to about 1 nm for the XPEEM analysis, making the buried electrode/HfO$_2$ interface accessible whilst preserving it from contamination. The results are obtained in the true photoemission channel mode from individual memory cells (5 × 5 μm) excited by low-flux laboratory X-rays, in contrast to most studies employing the X-ray absorption channel using potentially harmful bright synchrotron X-rays. Analysis of the local Hf 4f, O 1s and Ti 2p core level spectra yields valuable information on the chemistry of the forming process in a single device, and in particular the central role of oxygen vacancies thanks to the spectromicroscopic approach.
Document type :
Journal articles
Complete list of metadatas

Cited literature [17 references]  Display  Hide  Download

https://hal-cea.archives-ouvertes.fr/cea-01591611
Contributor : Dominique Girard <>
Submitted on : Thursday, September 21, 2017 - 3:59:44 PM
Last modification on : Monday, February 25, 2019 - 4:34:20 PM

File

1-s2.0-S0304399116303576-main....
Publisher files allowed on an open archive

Identifiers

Citation

Daniel M. Gottlob, Eugénie Martinez, Claire Mathieu, Christophe Lubin, Nicolas Chevalier, et al.. Laboratory based X-ray photoemission core-level spectromicroscopy of resistive oxide memories. Ultramicroscopy, Elsevier, 2017, 4, pp.1 - 5. ⟨10.1016/j.ultramic.2017.03.026⟩. ⟨cea-01591611⟩

Share

Metrics

Record views

192

Files downloads

145