Laboratory based X-ray photoemission core-level spectromicroscopy of resistive oxide memories

Abstract : HfO$_2$-based resistive oxide memories are studied by core-level spectromicroscopy using a laboratory-based X-ray photoelectron emission microscope (XPEEM). After forming, the top electrode is thinned to about 1 nm for the XPEEM analysis, making the buried electrode/HfO$_2$ interface accessible whilst preserving it from contamination. The results are obtained in the true photoemission channel mode from individual memory cells (5 × 5 μm) excited by low-flux laboratory X-rays, in contrast to most studies employing the X-ray absorption channel using potentially harmful bright synchrotron X-rays. Analysis of the local Hf 4f, O 1s and Ti 2p core level spectra yields valuable information on the chemistry of the forming process in a single device, and in particular the central role of oxygen vacancies thanks to the spectromicroscopic approach.
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Ultramicroscopy, Elsevier, 2017, 4, pp.1 - 5. 〈10.1016/j.ultramic.2017.03.026〉
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Daniel M. Gottlob, Eugénie Martinez, Claire Mathieu, Christophe Lubin, Nicolas Chevalier, et al.. Laboratory based X-ray photoemission core-level spectromicroscopy of resistive oxide memories. Ultramicroscopy, Elsevier, 2017, 4, pp.1 - 5. 〈10.1016/j.ultramic.2017.03.026〉. 〈cea-01591611〉

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