Laboratory based X-ray photoemission core-level spectromicroscopy of resistive oxide memories

Daniel M. Gottlob 1, * Eugénie Martinez 2 Claire Mathieu 1 Christophe Lubin 1 Nicolas Chevalier 2 Munique Kazar Mendes 2 Christelle Charpin 2 Eric Jalaguier 2 Olivier Renault 2 Nick Barrett 1
* Corresponding author
1 LENSIS - Laboratoire d'Etude des NanoStructures et Imagerie de Surface
SPEC - UMR3680 - Service de physique de l'état condensé, IRAMIS - Institut Rayonnement Matière de Saclay
2 CEA-LETI - Laboratoire d'Electronique et des Technologies de l'Information
Abstract : HfO$_2$-based resistive oxide memories are studied by core-level spectromicroscopy using a laboratory-based X-ray photoelectron emission microscope (XPEEM). After forming, the top electrode is thinned to about 1 nm for the XPEEM analysis, making the buried electrode/HfO$_2$ interface accessible whilst preserving it from contamination. The results are obtained in the true photoemission channel mode from individual memory cells (5 × 5 μm) excited by low-flux laboratory X-rays, in contrast to most studies employing the X-ray absorption channel using potentially harmful bright synchrotron X-rays. Analysis of the local Hf 4f, O 1s and Ti 2p core level spectra yields valuable information on the chemistry of the forming process in a single device, and in particular the central role of oxygen vacancies thanks to the spectromicroscopic approach.
Keywords : Resistive switching HfO 2 PEEM
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Daniel M. Gottlob, Eugénie Martinez, Claire Mathieu, Christophe Lubin, Nicolas Chevalier, et al.. Laboratory based X-ray photoemission core-level spectromicroscopy of resistive oxide memories. Ultramicroscopy, Elsevier, 2017, 4, pp.1 - 5. ⟨10.1016/j.ultramic.2017.03.026⟩. ⟨cea-01591611⟩

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