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Journal articles
Laboratory based X-ray photoemission core-level spectromicroscopy of resistive oxide memories
Abstract : HfO$_2$-based resistive oxide memories are studied by core-level spectromicroscopy using a laboratory-based X-ray photoelectron emission microscope (XPEEM). After forming, the top electrode is thinned to about 1 nm for the XPEEM analysis, making the buried electrode/HfO$_2$ interface accessible whilst preserving it from contamination. The results are obtained in the true photoemission channel mode from individual memory cells (5 × 5 μm) excited by low-flux laboratory X-rays, in contrast to most studies employing the X-ray absorption channel using potentially harmful bright synchrotron X-rays. Analysis of the local Hf 4f, O 1s and Ti 2p core level spectra yields valuable information on the chemistry of the forming process in a single device, and in particular the central role of oxygen vacancies thanks to the spectromicroscopic approach.
Cited literature [17 references]
https://hal-cea.archives-ouvertes.fr/cea-01591611
Contributor : Dominique Girard Connect in order to contact the contributor
Submitted on : Thursday, September 21, 2017 - 3:59:44 PM
Last modification on : Friday, July 2, 2021 - 3:46:14 AM
Contributor : Dominique Girard Connect in order to contact the contributor
Submitted on : Thursday, September 21, 2017 - 3:59:44 PM
Last modification on : Friday, July 2, 2021 - 3:46:14 AM
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