Fe implantation effect in the 6H-SiC semiconductor investigated by Mössbauer spectrometry

M.L. Diallo 1 L. Diallo 1 A. Fnidiki 1, * L. Lechevallier 1 F. Cuvilly 1 I. Blum 1 M. Viret 2 M. Marteau 3 D. Eyidi 3 J. Juraszek 1 A. Declémy 3
* Corresponding author
1 GPM - Groupe de physique des matériaux
2 LNO - Laboratoire Nano-Magnétisme et Oxydes
SPEC - UMR3680 - Service de physique de l'état condensé, IRAMIS - Institut Rayonnement Matière de Saclay
3 PPRIME - Institut Pprime
Abstract : P-doped 6H-SiC substrates were implanted with $^{57}$Fe ions at 380°C or 550°C to produce a diluted magnetic semiconductor with an Fe homogeneous concentration of about 100 nm thickness. The magnetic properties were studied with $^{57}$Fe Conversion Electron Mössbauer Spectrometry at room temperature (RT). Results obtained by this technique on annealed samples prove that ferromagnetism in $^{57}$Fe-implanted SiC for Fe concentrations close to 2% and 4% is mostly due to Fe atoms diluted in the matrix. In contrast, for Fe concentrations close to 6%, it also comes from Fe in magnetic phase nano-clusters. This study allows quantifying the Fe amount in the interstitial and substi-tutional sites and the nanoparticles and shows that the majority of the diluted Fe atoms are substituted on Si sites inducing ferromagnetism up to RT. Published by AIP Publishing.
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CEA | DSM-IRAMIS | IRAMIS-SPEC | UNIV-POITIERS | COMUE-NORMANDIE | UNIV-PARIS-SACLAY | GPM | INSA-ROUEN | CEA-DRF | CEA-UPSAY | UNIROUEN | INSA-GROUPE | PPRIME

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M.L. Diallo, L. Diallo, A. Fnidiki, L. Lechevallier, F. Cuvilly, et al.. Fe implantation effect in the 6H-SiC semiconductor investigated by Mössbauer spectrometry. Journal of Applied Physics, American Institute of Physics, 2017, 122, pp.083905. ⟨10.1063/1.4992102⟩. ⟨cea-01591469⟩

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