 |
Journal articles
Fe implantation effect in the 6H-SiC semiconductor investigated by Mössbauer spectrometry
Abstract : P-doped 6H-SiC substrates were implanted with $^{57}$Fe ions at 380°C or 550°C to produce a diluted magnetic semiconductor with an Fe homogeneous concentration of about 100 nm thickness. The magnetic properties were studied with $^{57}$Fe Conversion Electron Mössbauer Spectrometry at room temperature (RT). Results obtained by this technique on annealed samples prove that ferromagnetism in $^{57}$Fe-implanted SiC for Fe concentrations close to 2% and 4% is mostly due to Fe atoms diluted in the matrix. In contrast, for Fe concentrations close to 6%, it also comes from Fe in magnetic phase nano-clusters. This study allows quantifying the Fe amount in the interstitial and substi-tutional sites and the nanoparticles and shows that the majority of the diluted Fe atoms are substituted on Si sites inducing ferromagnetism up to RT. Published by AIP Publishing.
Cited literature [21 references]
https://hal-cea.archives-ouvertes.fr/cea-01591469
Contributor : Dominique Girard Connect in order to contact the contributor
Submitted on : Thursday, September 21, 2017 - 2:11:52 PM
Last modification on : Friday, July 2, 2021 - 3:46:14 AM
Contributor : Dominique Girard Connect in order to contact the contributor
Submitted on : Thursday, September 21, 2017 - 2:11:52 PM
Last modification on : Friday, July 2, 2021 - 3:46:14 AM
File
2E4992102_2.pdf
Publisher files allowed on an open archive