Fe implantation effect in the 6H-SiC semiconductor investigated by Mössbauer spectrometry

M.L. Diallo 1 L. Diallo 1 A. Fnidiki 1, * L. Lechevallier 1 F. Cuvilly 1 I. Blum 1 M. Viret 2 M. Marteau 3 D. Eyidi 3 J. Juraszek 1 A. Declémy 3
* Auteur correspondant
1 GPM - Groupe de physique des matériaux
2 LNO - Laboratoire Nano-Magnétisme et Oxydes
SPEC - UMR3680 - Service de physique de l'état condensé, IRAMIS - Institut Rayonnement Matière de Saclay
3 PPRIME - Institut Pprime
Abstract : P-doped 6H-SiC substrates were implanted with $^{57}$Fe ions at 380°C or 550°C to produce a diluted magnetic semiconductor with an Fe homogeneous concentration of about 100 nm thickness. The magnetic properties were studied with $^{57}$Fe Conversion Electron Mössbauer Spectrometry at room temperature (RT). Results obtained by this technique on annealed samples prove that ferromagnetism in $^{57}$Fe-implanted SiC for Fe concentrations close to 2% and 4% is mostly due to Fe atoms diluted in the matrix. In contrast, for Fe concentrations close to 6%, it also comes from Fe in magnetic phase nano-clusters. This study allows quantifying the Fe amount in the interstitial and substi-tutional sites and the nanoparticles and shows that the majority of the diluted Fe atoms are substituted on Si sites inducing ferromagnetism up to RT. Published by AIP Publishing.
Type de document :
Article dans une revue
Journal of Applied Physics, American Institute of Physics, 2017, 122, pp.083905. 〈10.1063/1.4992102〉
Liste complète des métadonnées

Littérature citée [30 références]  Voir  Masquer  Télécharger
https://hal-cea.archives-ouvertes.fr/cea-01591469
Contributeur : Dominique Girard <>
Soumis le : jeudi 21 septembre 2017 - 14:11:52
Dernière modification le : mardi 10 avril 2018 - 01:50:01

Fichier

2E4992102_2.pdf
Fichiers éditeurs autorisés sur une archive ouverte

Identifiants

Collections

CEA | DSM-IRAMIS | IRAMIS-SPEC | UNIV-POITIERS | COMUE-NORMANDIE | UNIV-PARIS-SACLAY | GPM | INSA-ROUEN | CEA-DRF | CEA-UPSAY

Citation

M.L. Diallo, L. Diallo, A. Fnidiki, L. Lechevallier, F. Cuvilly, et al.. Fe implantation effect in the 6H-SiC semiconductor investigated by Mössbauer spectrometry. Journal of Applied Physics, American Institute of Physics, 2017, 122, pp.083905. 〈10.1063/1.4992102〉. 〈cea-01591469〉

Exporter

BibTeX TEI DC DCterms EndNote

Partager

Métriques

Consultations de la notice

109

Téléchargements de fichiers

33

Contact

support.ccsd.cnrs.fr
hal.support@ccsd.cnrs.fr
Logo CCSD