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Journal Articles Journal of Applied Physics Year : 2017

Fe implantation effect in the 6H-SiC semiconductor investigated by Mössbauer spectrometry

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Lindor Diallo
L. Lechevallier
F. Cuvilly
I. Blum
M. Marteau
  • Function : Author
D. Eyidi
  • Function : Author
J. Juraszek
A. Declémy
  • Function : Author

Abstract

P-doped 6H-SiC substrates were implanted with $^{57}$Fe ions at 380°C or 550°C to produce a diluted magnetic semiconductor with an Fe homogeneous concentration of about 100 nm thickness. The magnetic properties were studied with $^{57}$Fe Conversion Electron Mössbauer Spectrometry at room temperature (RT). Results obtained by this technique on annealed samples prove that ferromagnetism in $^{57}$Fe-implanted SiC for Fe concentrations close to 2% and 4% is mostly due to Fe atoms diluted in the matrix. In contrast, for Fe concentrations close to 6%, it also comes from Fe in magnetic phase nano-clusters. This study allows quantifying the Fe amount in the interstitial and substi-tutional sites and the nanoparticles and shows that the majority of the diluted Fe atoms are substituted on Si sites inducing ferromagnetism up to RT. Published by AIP Publishing.
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Dates and versions

cea-01591469 , version 1 (21-09-2017)

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Lindor Diallo, Lindor Diallo, A. Fnidiki, L. Lechevallier, F. Cuvilly, et al.. Fe implantation effect in the 6H-SiC semiconductor investigated by Mössbauer spectrometry. Journal of Applied Physics, 2017, 122, pp.083905. ⟨10.1063/1.4992102⟩. ⟨cea-01591469⟩
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