Fe implantation effect in the 6H-SiC semiconductor investigated by Mössbauer spectrometry

Lindor Diallo (1) , Lindor Diallo (1) , A. Fnidiki (1) , L. Lechevallier (1) , F. Cuvilly (1) , I. Blum (1) , M. Viret (2) , M. Marteau (3) , D. Eyidi (3) , J. Juraszek (1) , A. Declémy (3)

1 GPM - Groupe de physique des matériaux
2 LNO - Laboratoire Nano-Magnétisme et Oxydes
3 PPRIME - Institut Pprime

P-doped 6H-SiC substrates were implanted with $^{57}$Fe ions at 380°C or 550°C to produce a diluted magnetic semiconductor with an Fe homogeneous concentration of about 100 nm thickness. The magnetic properties were studied with $^{57}$Fe Conversion Electron Mössbauer Spectrometry at room temperature (RT). Results obtained by this technique on annealed samples prove that ferromagnetism in $^{57}$Fe-implanted SiC for Fe concentrations close to 2% and 4% is mostly due to Fe atoms diluted in the matrix. In contrast, for Fe concentrations close to 6%, it also comes from Fe in magnetic phase nano-clusters. This study allows quantifying the Fe amount in the interstitial and substi-tutional sites and the nanoparticles and shows that the majority of the diluted Fe atoms are substituted on Si sites inducing ferromagnetism up to RT. Published by AIP Publishing.

Domains: Physics [physics]

Lindor Diallo, Lindor Diallo, A. Fnidiki, L. Lechevallier, F. Cuvilly, et al.. Fe implantation effect in the 6H-SiC semiconductor investigated by Mössbauer spectrometry. Journal of Applied Physics, 2017, 122, pp.083905. ⟨10.1063/1.4992102⟩. ⟨cea-01591469⟩