A. Klein, Sample Preparation, Journal of the American Ceramic Society, vol.18, issue.112, pp.331-345
DOI : 10.1116/1.591472

C. Brabec, V. Dyakonov, and U. Scherf, Organic Photovoltaics: Materials, Device Physics, and Manufacturing Technologies

&. Gmbh, . Co, and . Kgaa, Molecular Semiconductors in Organic Photovoltaic Cells, Chem. Rev, issue.1311, pp.110-6689, 2009.

J. Meiss, C. L. Uhrich, K. Fehse, S. Pfuetzner, M. K. Riede et al., Transparent Electrode Materials for Solar Cells Photonics for solar Energy Systems II, Photonics Europe, pp.700210-700218, 2008.

P. Hyesung, J. A. Rowehl, K. Kang, K. Bulovic, V. Jing et al., Doped Graphene Electrodes for Organic Solar Cells, Nanotechnology, vol.21, issue.550, pp.505204-505209, 2010.

Y. Zhu, Z. Sun, Z. Yan, Z. Jin, and J. M. Tour, Rational Design of Hybrid Graphene Films for High-Performance Transparent Electrodes, ACS Nano, vol.5, issue.8, pp.6472-6479, 2011.
DOI : 10.1021/nn201696g

D. Johnson, Graphene Still Trying to Replace ITO in Organic Solar Cells spectrum, ieee.org, issue.7, 2017.

H. M. Mirletz, K. A. Peterson, I. T. Martin, and R. H. French, Degradation of transparent conductive oxides: Interfacial engineering and mechanistic insights, Solar Energy Materials and Solar Cells, vol.143, issue.8, pp.529-538, 2015.
DOI : 10.1016/j.solmat.2015.07.030

J. S. Yeo, J. M. Yun, M. Kang, D. Khim, S. H. Lee et al., An Approach for an Advanced Anode Interfacial Layer with Electron-Blocking Ability to Achieve High-Efficiency Organic Photovoltaics, ACS Applied Materials & Interfaces, vol.6, issue.22, pp.19613-19620
DOI : 10.1021/am503989u

M. D. Irwin, D. B. Buchholz, A. W. Hains, R. P. Chang, and T. J. Marks, p-Type semiconducting nickel oxide as an efficiency-enhancing anode interfacial layer in polymer bulk-heterojunction solar cells, Proc. Natl. Acad. Sci, pp.105-2783, 2008.
DOI : 10.1002/adfm.200600489

H. Zeng, X. Zhu, Y. Liang, and X. Guo, Interfacial Layer Engineering for Performance Enhancement in Polymer Solar Cells, Polymers, vol.85, issue.2, pp.333-372, 2015.
DOI : 10.1002/aenm.201401529

S. Berny, L. Tortech, M. Véber, and D. Fichou, Dithiapyrannylidenes as Efficient Hole Collection Interfacial Layers in Organic Solar Cells, ACS Applied Materials & Interfaces, vol.2, issue.11, pp.3059-3068, 2010.
DOI : 10.1021/am1005546

A. Kahn, N. Koch, and W. Gao, Electronic Structure and Electrical Properties of Interfaces between Metals and Pi-Conjugated Molecular Films, J. Polym. Sci. Part B Polym. Phys, issue.1321, pp.41-2529, 2003.
DOI : 10.1002/polb.10642

X. Crispin, V. Geskin, A. Crispin, J. Cornil, R. Lazzaroni et al., Characterization of the Interface Dipole at Organic/ Metal Interfaces, Journal of the American Chemical Society, vol.124, issue.27, pp.124-8131, 2002.
DOI : 10.1021/ja025673r

S. Braun, W. Osikowicz, Y. Wang, and W. Salaneck, Energy level alignment regimes at hybrid organic???organic and inorganic???organic interfaces, Organic Electronics, vol.8, issue.1, pp.14-20, 2007.
DOI : 10.1016/j.orgel.2006.10.006
URL : http://liu.diva-portal.org/smash/get/diva2:23943/FULLTEXT01

S. Braun, W. R. Salaneck, and M. Fahlman, Energy-Level Alignment at Organic/Metal and Organic/Organic Interfaces, Advanced Materials, vol.321, issue.43, pp.14-15, 2009.
DOI : 10.1002/adma.200802893

A. Khaliq, J. J. Gallet, F. Bournel, D. Pierucci, H. Tissot et al., Charge Transfer and Energy Level Alignment at the Interface between Cyclopentene-Modified Si(001) and Tetracyanoquinodimethane, The Journal of Physical Chemistry C, vol.118, issue.39, pp.118-22499
DOI : 10.1021/jp502680b

H. Vázquez, F. Flores, and A. Kahn, Induced Density of States model for weakly-interacting organic semiconductor interfaces, Organic Electronics, vol.8, issue.2-3, pp.2-3, 2007.
DOI : 10.1016/j.orgel.2006.07.006

M. Oehzelt, N. Koch, and G. Heimel, Organic semiconductor density of states controls the energy level alignment at electrode interfaces, Nature Communications, vol.5, pp.4174-4181, 2014.
DOI : 10.1063/1.2890415

R. Schlögl, Surface States, Surface Potentials, and Segregation at Surfaces of Tin-Doped In2O3

A. Walsh, J. L. Da-silva, S. H. Wei, C. Körber, A. Klein et al., et al. Nature of the Band Gap of In2O3 Revealed by First- Principles Calculations and X-Ray Spectroscopy, Phys. Rev. Lett, issue.16, pp.100-167402, 2008.

E. Burstein, Anomalous Optical Absorption Limit in InSb, Physical Review, vol.237, issue.3, pp.632-633, 1954.
DOI : 10.1098/rsta.1938.0004

T. S. Moss, The Interpretation of the Properties of Indium Antimonide, Proc. Phys. Soc. Sect, pp.775-782, 1954.
DOI : 10.1088/0370-1301/67/10/306

A. Klein, C. Körber, A. Wachau, F. Säuberlich, Y. Gassenbauer et al., Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment, Materials, vol.187, issue.11, pp.3-4892, 2010.
DOI : 10.1002/adem.200500125

S. Wei, R. G. Egdell, and D. J. Payne, Electronic Structure of In2O3 and Sn-Doped In2O3 by Hard X-Ray Photoemission Spectroscopy, Phys. Rev. B, issue.16, pp.81-165207, 2010.

J. Alizon, J. Blanc, J. Gallice, H. Robert, C. Fabre et al., Investigations of high conductivity of dipyranylidene and dithiadipyranylidene ??? TCNQ complexes, Organic Conductors and Semiconductors, pp.563-569, 1977.
DOI : 10.1007/BFb0012411

B. W. Andrade, S. Datta, S. R. Forrest, P. Djurovich, E. Polikarpov et al., Relationship between the Ionization and Oxidation Potentials of Molecular Organic Semiconductors, Org. Electron. physics, Mater. Appl, vol.6, issue.1, pp.11-20, 2005.

. Tétraphényldipyranylidène, Dip ?4), Acta Crystallogr. Sect. B, vol.38, issue.5, pp.1629-1631, 1982.

M. G. Mason, L. S. Hung, C. W. Tang, S. T. Lee, K. W. Wong et al., Characterization of treated indium???tin???oxide surfaces used in electroluminescent devices, Journal of Applied Physics, vol.86, issue.3, pp.1688-1692, 1999.
DOI : 10.1063/1.337534

A. Klein, Energy band alignment at interfaces of semiconducting oxides: A review of experimental determination using photoelectron spectroscopy and comparison with theoretical predictions by the electron affinity rule, charge neutrality levels, and the common anion rule, Thin Solid Films, vol.520, issue.10, pp.520-3721
DOI : 10.1016/j.tsf.2011.10.055

J. L. Campbell and T. Papp, WIDTHS OF THE ATOMIC K???N7 LEVELS, Atomic Data and Nuclear Data Tables, vol.77, issue.1, pp.1-56, 2001.
DOI : 10.1006/adnd.2000.0848

J. Hwang, A. Wan, and A. Kahn, Energetics of metal???organic interfaces: New experiments and assessment of the field, Materials Science and Engineering: R: Reports, vol.64, issue.1-2, pp.1-31, 2009.
DOI : 10.1016/j.mser.2008.12.001

J. Gassmann, S. V. Yampolskii, Y. A. Genenko, T. C. Reusch, and A. Klein, Functional Interfaces for Transparent Organic Electronic Devices: Consistent Description of Charge Injection by Combining In Situ XPS and Current Voltage Measurements with Self-Consistent Modeling, The Journal of Physical Chemistry C, vol.120, issue.19
DOI : 10.1021/acs.jpcc.6b02567

A. Jablonski, Determination of the electron inelastic mean free path in solids from the elastic electron backscattering intensity, Surface and Interface Analysis, vol.562, issue.413, pp.37-1035, 2005.
DOI : 10.1103/PhysRevB.5.4709

C. J. Powell and A. Jablonski, Surface sensitivity of X-ray photoelectron spectroscopy, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol.601, issue.1-2, pp.54-65, 2009.
DOI : 10.1016/j.nima.2008.12.103

J. A. Venables and G. D. Spiller, Nucleation and Growth of Thin Films, pp.399-459, 1984.

H. Ibach and H. Lüth, Solid-State Physics: An Introduction to Principles of, Materials Science, 2010.

D. Qi, W. Chen, X. Gao, L. Wang, S. Chen et al., Surface Transfer Doping of Diamond (100) by Tetrafluoro-tetracyanoquinodimethane, Journal of the American Chemical Society, vol.129, issue.26, pp.129-8084, 2007.
DOI : 10.1021/ja072133r

T. L. Barr, Nature of the use of adventitious carbon as a binding energy standard, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.13, issue.3, pp.1239-1246, 1995.
DOI : 10.1116/1.579868

V. M. Bermudez, A. D. Berry, H. Kim, and A. Piqué, Functionalization of Indium Tin Oxide, Langmuir, vol.22, issue.26, pp.11113-11125, 2006.
DOI : 10.1021/la061578a

S. P. Harvey, T. O. Mason, Y. Gassenbauer, R. Schafranek, and A. Klein, Surface versus bulk electronic/defect structures of transparent conducting oxides: I. Indium oxide and ITO, Journal of Physics D: Applied Physics, vol.39, issue.18
DOI : 10.1088/0022-3727/39/18/006

G. P. López, D. G. Castner, and B. D. Ratner, XPS O 1s binding energies for polymers containing hydroxyl, ether, ketone and ester groups, Surface and Interface Analysis, vol.8, issue.5, pp.17-267, 1991.
DOI : 10.1002/sia.740170508

Y. Gassenbauer and A. Klein, Electronic and Chemical Properties of Tin-Doped Indium Oxide (ITO) Surfaces and ITO/ZnPc Interfaces Studied In-situ by Photoelectron Spectroscopy, The Journal of Physical Chemistry B, vol.110, issue.10, pp.110-4793, 2006.
DOI : 10.1021/jp056640b

Y. Hirose, A. Kahn, V. Aristov, P. Soukiassian, V. Bulovic et al., Chemistry and Electronic Properties of Metal-Organic Semiconductor Interfaces, Phys. Rev. B, issue.19, pp.54-13748, 1996.

S. Carniato, J. J. Gallet, F. Rochet, G. Dufour, F. Bournel et al., Characterization of Hydroxyl Groups on Water-Reacted Si (001)-2x1 Using Synchrotron Radiation O 1s Core-Level Spectroscopies and Core-Excited State Density-Functional Calculations

R. Coustel, S. Carniato, F. Rochet, and N. Witkowski, Pyridine on Si(001)-(2x1): Density Functional Theory Simulations Compared with Spectroscopic Measurements, Phys. Rev. B -Condens. Matter Mater. Phys, vol.2012, issue.523, pp.85-035323
DOI : 10.1103/physrevb.85.035323
URL : https://hal.archives-ouvertes.fr/hal-01239012

S. Carniato, F. Rochet, J. J. Gallet, F. Bournel, G. Dufour et al., DFT Calculations of XPS/NEXAFS and IR Spectra to Elucidate the Reaction Products of Acetonitrile with Si(001)-2x1, Surf. Sci, issue.23, pp.601-5515, 2007.

R. Funke and U. Köhler, Molecular Staples on Si(001)-2x1: Dual-Head Primary Amines, J

S. Carniato and V. Ilakovac, Experimental and Theoretical NEXAFS/XPS Study of the Room- Temperature Adsorption of Acetonitrile on Si (001) -2x1, Phys. Rev. B -Condens. Matter Mater

R. G. Egdell, Dopant and Defect Induced Electronic States at In2O3 Surfaces In Springer Series in Surface Sciences, Series in Surface Sciences, pp.351-400, 2015.
DOI : 10.1007/978-3-319-14367-5_12

P. Ágoston, P. Erhart, A. Klein, K. Albe, and . Geometry, Geometry, electronic structure and thermodynamic stability of intrinsic point defects in indium oxide, Journal of Physics: Condensed Matter, vol.21, issue.45, pp.455801-455811, 2009.
DOI : 10.1088/0953-8984/21/45/455801

D. Cahen and A. Kahn, Electron Energetics at Surfaces and Interfaces: Concepts and Experiments, Advanced Materials, vol.15, issue.4
DOI : 10.1002/adma.200390065

F. Evangelista, V. Carravetta, G. Stefani, B. Jansik, M. Alagia et al., Electronic structure of copper phthalocyanine: An experimental and theoretical study of occupied and unoccupied levels, The Journal of Chemical Physics, vol.5, issue.12, pp.126-124709, 2007.
DOI : 10.1016/S0009-2614(00)00882-4

D. J. Milliron, I. G. Hill, C. Shen, A. Kahn, and J. Schwartz, Surface oxidation activates indium tin oxide for hole injection, Journal of Applied Physics, vol.1, issue.1, pp.572-576, 2000.
DOI : 10.1016/S0009-2614(97)01352-3

Z. Xu, L. Chen, M. Chen, G. Li, and Y. Yang, Energy level alignment of poly(3-hexylthiophene): [6,6]-phenyl C61 butyric acid methyl ester bulk heterojunction, Applied Physics Letters, vol.95, issue.1, pp.95-13301, 2008.
DOI : 10.1038/nmat2102

Z. Guan, J. B. Kim, H. Wang, C. Jaye, D. A. Fischer et al., Direct determination of the electronic structure of the poly(3-hexylthiophene):phenyl-[6,6]-C61 butyric acid methyl ester blend, Organic Electronics, vol.11, issue.11, pp.11-1779, 2010.
DOI : 10.1016/j.orgel.2010.07.023

J. H. Lee and J. J. Kim, Interfacial Doping for Efficient Charge Injection in Organic Semiconductors, Phys. Status Solidi Appl. Mater. Sci, vol.2012, issue.2098, pp.1399-1413
DOI : 10.1002/pssa.201228199
URL : http://onlinelibrary.wiley.com/doi/10.1002/pssa.201228199/pdf

S. J. Yoo and J. J. Kim, Charge Transport in Electrically Doped Amorphous Organic Semiconductors, Macromolecular Rapid Communications, vol.91, issue.11, pp.36-984
DOI : 10.1063/1.2776355

B. Lüssem, M. Riede, and K. Leo, Doping of Organic Semiconductors