M. Persson, M. Bouanani, H. J. Hult, M. Whitlow, I. F. Andersson et al., Interfacial reaction studies of Cr, Ni, Ti, and Pt metallization on InP, Journal of Applied Physics, vol.194, issue.6, p.3346, 1996.
DOI : 10.1016/0925-8388(93)90647-6

W. G. Chass-e, K. Wilke, and . Horn, Chemical reactions and temperature-dependent interface formation of Ti/InP (110), Surface and Interface Analysis, vol.37, issue.23, p.315, 1989.
DOI : 10.1116/1.584281

M. Appelbaum, F. Robbins, and . Schrey, Sputtered Ni-P as an ohmic contact to n-InP, p-InGaAs and as a diffusion barrier, IEEE Transactions on Electron Devices, vol.34, issue.5, p.1026, 1987.
DOI : 10.1109/T-ED.1987.23039

S. Fatemi and V. G. Weizer, The structural and electrical properties of low???resistance Ni contacts to InP, Journal of Applied Physics, vol.69, issue.1, p.289, 1993.
DOI : 10.1016/0040-6090(87)90301-4

S. Mangat, P. Soukiassian, Y. Huttel, Z. Hurych, B. Gruzza et al., ion bombardment???induced modification of surface atomic bond lengths on InP(100) wafer, Applied Physics Letters, vol.22, issue.14, p.1957, 1993.
DOI : 10.1021/ja00220a008

L. Rodriguez, E. Toselli, M. Ghegin, N. Rebaud, N. Rochat et al., Cleaning of InGaAs and InP Layers for Nanoelectronics and Photonics Contact Technology Applications, ECS Transactions, vol.69, issue.8, p.251, 2015.
DOI : 10.1149/06908.0251ecst

F. Ghegin, J. Nemouchi, C. Perrin, K. Hoummada, S. Favier et al., Phase formation in the Ni/n???InP contacts for heterogeneous III/V-silicon photonic integration, Microelectronic Engineering, vol.156, p.86, 2016.
DOI : 10.1016/j.mee.2015.12.008
URL : https://hal.archives-ouvertes.fr/hal-01435133

D. H. Cuypers, M. Van-dorp, S. Tallarida, T. Brizzi, L. N. Conard et al., Study of InP Surfaces after Wet Chemical Treatments, ECS Journal of Solid State Science and Technology, vol.3, issue.1, p.3016, 2014.
DOI : 10.1149/2.005401jss