Precise EOT regrowth extraction enabling performance analysis of Low Temperature Extension First devices

Abstract : — 3D sequential integration requires top FETs processing with a low thermal budget (500°C). The analysis of the origin of the performance difference between Low Temperature (LT) MOSFET and high temperature standard process must take into account a potential EOT modification for short gate lengths. In this work, the difficulty of precise EOT extraction for scaled devices is observed by CV measurements and an alternative methodology using IV measurements is proposed. This methodology has been applied to an extension first integration, and the extraction accuracy is high enough to conclude to an EOT regrowth for the low temperature nFETs only. Thus, the origin of performance degradation between LT and HT, previously attributed to larger access resistance, highlights also a detrimental role of gate stack instability. The origin of this variation is attributed to oxygen ingress, through the thin extension first liner which should be suppressed by minor process optimizations.
Type de document :
Direction d'ouvrage, Proceedings, Dossier
France. 2017
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https://hal-cea.archives-ouvertes.fr/cea-01525266
Contributeur : Jessy Micout <>
Soumis le : vendredi 19 mai 2017 - 17:02:35
Dernière modification le : mercredi 14 février 2018 - 14:05:28

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  • HAL Id : cea-01525266, version 1

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Jessy Micout, Quentin Rafhay, Xavier Garros, Mikael Cassé, Jean Coignus, et al.. Precise EOT regrowth extraction enabling performance analysis of Low Temperature Extension First devices. France. 2017. 〈cea-01525266〉

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