K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang et al., Electric Field Effect in Atomically Thin Carbon Films, Science, vol.306, issue.5696, p.666, 2004.
DOI : 10.1126/science.1102896

K. Novoselov, A roadmap for graphene, Nature, vol.335, issue.7419, p.192, 2012.
DOI : 10.1038/nature11458

C. Jin, F. Lin, K. Suenaga, and S. Iijima, Fabrication of a Freestanding Boron Nitride Single Layer and Its Defect Assignments, Physical Review Letters, vol.102, issue.19, p.195505, 2009.
DOI : 10.1103/PhysRevLett.102.195505

R. Mas-ballesté, C. Gómez-navarro, J. Gómez-herrero, and . Zamora, 2D materials: to graphene and beyond, Nanoscale, vol.5, issue.1, p.20, 2011.
DOI : 10.1039/C0NR00323A

S. Butler, Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene, ACS Nano, vol.7, issue.4, p.2898, 2013.
DOI : 10.1021/nn400280c

A. K. Geim and I. Grigorieva, Van der Waals heterostructures, Nature, vol.72, issue.7459, p.419, 2013.
DOI : 10.1038/nature12385
URL : http://arxiv.org/abs/1307.6718

A. Chanana and S. Mahapatra, -metal interface, Journal of Applied Physics, vol.119, issue.1, p.14303, 2016.
DOI : 10.1109/TED.2015.2433931
URL : https://hal.archives-ouvertes.fr/hal-01488434

S. Desai, MoS2 transistors with 1-nanometer gate lengths, Science, vol.13, issue.13, p.99, 2016.
DOI : 10.1103/PhysRevLett.105.136805

D. Qiu and E. Kim, Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors, Scientific Reports, vol.8, issue.1, p.13743, 2015.
DOI : 10.1038/nnano.2013.74
URL : http://doi.org/10.1038/srep13743

N. Myoung, K. Seo, S. J. Lee, and G. Ihm, Heterostructures, ACS Nano, vol.7, issue.8, pp.7021-7028, 2013.
DOI : 10.1021/nn402919d

X. Liu and Z. Li, Hybrid Structure: Ab Initio Calculations, The Journal of Physical Chemistry Letters, vol.6, issue.16, p.3269, 2015.
DOI : 10.1021/acs.jpclett.5b01233

W. Jin, van der Waals heterostructures via interlayer twist, Physical Review B, vol.92, issue.20, p.201409, 2015.
DOI : 10.1103/PhysRevB.92.201409

H. C. Diaz, J. Avila, C. Chen, R. Addou, M. C. Asensi et al., van der Waals Heterostructures, Nano Letters, vol.15, issue.2, pp.1135-1175, 2015.
DOI : 10.1021/nl504167y

Y. Ma, Y. Dai, M. Guo, C. Niu, and B. Huang, Graphene adhesion on MoS2 monolayer: An ab initio study, Nanoscale, vol.76, issue.9, pp.3883-3890, 2011.
DOI : 10.1039/c1cp21159e

A. Ebnonnasir, B. Narayanan, S. Kodambaka, and C. Ciobanu, -graphene heterostructures, Applied Physics Letters, vol.105, issue.3, p.31603, 2014.
DOI : 10.1021/nn5003387

P. Jelínek, H. Wang, J. P. Lewis, O. Sankey, and J. Ortega, tight-binding methods, Physical Review B, vol.71, issue.23, p.235101, 2005.
DOI : 10.1103/PhysRevB.71.235101

Y. J. Dappe, J. Ortega, and F. Flores, Intermolecular interaction in density functional theory: Application to carbon nanotubes and fullerenes, Physical Review B, vol.79, issue.16, p.165409, 2009.
DOI : 10.1103/PhysRevB.79.165409

E. Abad, J. I. Martínez, J. Ortega, and F. Flores, /Au(111) configuration, Journal of Physics: Condensed Matter, vol.22, issue.30, p.304007, 2010.
DOI : 10.1088/0953-8984/22/30/304007

E. Abad, Level Alignment and Electron Transport Through Metal/Organic Contacts (Heidelberg: Springer) (https://doi.org/10, pp.978-981, 2013.
DOI : 10.1007/978-3-642-30907-6

C. González, E. Abad, Y. J. Dappe, and J. Cuevas, Theoretical study of carbon-based tips for scanning tunnelling microscopy, Nanotechnology, vol.27, issue.10, p.105201, 2016.
DOI : 10.1088/0957-4484/27/10/105201

C. González, B. Biel, and Y. J. Dappe, monolayer by scanning tunnelling microscopy, Nanotechnology, vol.27, issue.10, p.105702, 2016.
DOI : 10.1088/0957-4484/27/10/105702

C. Sánchez-sánchez, C. González, P. Jelinek, J. Méndez, P. L. De-andres et al., (110)-(1 ?? 1) surface by DFT calculations, Nanotechnology, vol.21, issue.40, p.405702, 2010.
DOI : 10.1088/0957-4484/21/40/405702

W. Ku, T. Berlijn, and C. Lee, Unfolding First-Principles Band Structures, Physical Review Letters, vol.104, issue.21, p.216401, 2010.
DOI : 10.1103/PhysRevLett.104.216401
URL : http://arxiv.org/abs/1002.4218

L. Gong, S. L. Xiu, M. M. Zheng, P. Zhao, Z. Zhang et al., Electronic properties of silicene superlattices: roles of degenerate perturbation and inversion symmetry breaking, J. Mater. Chem. C, vol.139, issue.41, p.8773, 2014.
DOI : 10.1039/C4TC01665C

D. Pierucci, -Graphene van der Waals Heterostructures, Nano Letters, vol.16, issue.7, p.4054, 2016.
DOI : 10.1021/acs.nanolett.6b00609
URL : https://hal.archives-ouvertes.fr/hal-01379562

B. Aziza, Z. Henck, H. , D. Felice, D. Pierucci et al., Bandgap inhomogeneity of MoS2 monolayer on epitaxial graphene bilayer in van der Waals p-n junction, Carbon, vol.110, p.396, 2016.
DOI : 10.1016/j.carbon.2016.09.041
URL : https://hal.archives-ouvertes.fr/cea-01490885