Influence of spin-orbit interaction within the insulating barrier on the electron transport in magnetic tunnel junctions

A. Vedyayev; N. Ryzhanova; N. Strelkov; M. Titova; M. Chshiev; B. Rodmacq; S. Auffret; L. Cuchet; L. Nistor; B. Dieny

Influence of spin-orbit interaction within the insulating barrier on the electron transport in magnetic tunnel junctions

A. Vedyayev ^{1, 2, *} N. Ryzhanova ^{1, 2} N. Strelkov ^{1, 2} M. Titova ² M. Chshiev ¹ B. Rodmacq ¹ S. Auffret ¹ L. Cuchet ¹ L. Nistor ³ B. Dieny ^{1, *}

* Corresponding author

1 SPINTEC - SPINtronique et TEchnologie des Composants

2 MSU - Lomonosov Moscow State University

3 CEA-LETI - Laboratoire d'Electronique et des Technologies de l'Information

Abstract : We present a theory of the anisotropy of tunneling magnetoresistance (ATMR) phenomenon in magnetic tunnel junctions (MTJs) attributed to Rashba spin-orbit interaction in the insulating barrier. ATMR represents the difference of tunnel magnetoresistance (TMR) amplitude measured with in-plane and out-of-plane magnetic configurations. It is demonstrated that within the spin-polarized free-electron model the change of conductance associated with the ATMR is exactly twice the change of conductance measured at full saturation (i.e., in parallel configuration of magnetizations) between in-plane and out-of-plane configuration, i.e., the tunneling anisotropic magnetoresistance (TAMR). Both ATMR and TAMR are closely related to the TMR amplitude and spin-orbit constant. The predicted ATMR phenomenon is confirmed experimentally, showing a few percent value in the case of the widely studied CoFeB/MgO/CoFeB based MTJ.

Keywords : Spintronics Spin Hall effect Rashba effect SOI ATMR TAMR

Document type :

Journal articles

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Physics [physics] / Condensed Matter [cond-mat]

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https://hal-cea.archives-ouvertes.fr/cea-01517270
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Submitted on : Friday, July 13, 2018 - 4:03:15 PM
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