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Journal articles
Influence of spin-orbit interaction within the insulating barrier on the electron transport in magnetic tunnel junctions
Abstract : We present a theory of the anisotropy of tunneling magnetoresistance (ATMR) phenomenon in magnetic tunnel junctions (MTJs) attributed to Rashba spin-orbit interaction in the insulating barrier. ATMR represents the difference of tunnel magnetoresistance (TMR) amplitude measured with in-plane and out-of-plane magnetic configurations. It is demonstrated that within the spin-polarized free-electron model the change of conductance associated with the ATMR is exactly twice the change of conductance measured at full saturation (i.e., in parallel configuration of magnetizations) between in-plane and out-of-plane configuration, i.e., the tunneling anisotropic magnetoresistance (TAMR). Both ATMR and TAMR are closely related to the TMR amplitude and spin-orbit constant. The predicted ATMR phenomenon is confirmed experimentally, showing a few percent value in the case of the widely studied CoFeB/MgO/CoFeB based MTJ.
Cited literature [28 references]
https://hal-cea.archives-ouvertes.fr/cea-01517270
Contributor : Mairbek Chshiev <>
Submitted on : Friday, July 13, 2018 - 4:03:15 PM
Last modification on : Friday, April 24, 2020 - 10:28:08 AM
Document(s) archivé(s) le : Monday, October 15, 2018 - 10:31:56 PM
Contributor : Mairbek Chshiev <>
Submitted on : Friday, July 13, 2018 - 4:03:15 PM
Last modification on : Friday, April 24, 2020 - 10:28:08 AM
Document(s) archivé(s) le : Monday, October 15, 2018 - 10:31:56 PM
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