G. Steele, H. S. Van-der-zant, A. Castellanos-gomez, and O. Lopez-sanchez, Photocurrent Generation with Two-Dimensional van Der Waals Semiconductors, 3691?3718. (3), p.44

H. J. Conley, B. Wang, J. I. Ziegler, R. F. Haglund, S. T. Pantelides et al., Bandgap Engineering of Strained Monolayer and Bilayer MoS 2 Metal to Semiconductor Transition in Metallic Transition Metal Dichalcogenides, ) Tang, Q.; Jiang, D. Stabilization and Band-Gap Tuning of the 1T- MoS 2 Monolayer by Covalent Functionalization, pp.3626-3630, 2010.

M. G. Silly, R. Belkhou, A. Shukla, F. Sirotti, N. Gogneau et al., Self-Organized Metal ? Semiconductor Epitaxial Graphene Layer on off-Axis 4H-SiC (0001) Structural Semiconductor-to-Semimetal Phase Transition in Two-Dimensional Materials Induced by Electrostatic Gating, 1026?1037. (9), 2016.

D. Liu, Y. Guo, L. Fang, J. Robertson, D. Liu et al., and its electrical contacts, Applied Physics Letters, vol.103, issue.18, p.183113
DOI : 10.1016/j.cattod.2008.09.041

J. Wang, H. Zhu, C. L. Hinkle, M. Quevedo-lopez, H. N. Alshareef et al., Impurities and Electronic Property Variations of Natural MoS 2 Crystal Surfaces Theoretical Characterisation of Point Defects on a MoS2Monolayer by Scanning Tunnelling Microscopy Chalcogen Vacancies in Monolayer Transition Metal Dichalcogenides and Fermi Level Pinning at Contacts Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding, 48?53. (18) 5738?5745. (19)Situ and Tunable Nitrogen-Doping of MoS 2 Nanosheets. Sci. Rep. 2014, 4, 7582. (20) Laskar, pp.9124-9133, 2016.

R. M. Wallace and D. Mailly, Covalent Nitrogen Doping and Compressive Strain in MoS 2 by Remote N 2 Plasma Exposure, 5437?5443. (22) Pallecchi

W. Poirier and A. Ouerghi, High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via Post-Growth Annealing under Hydrogen, J. A

R. Cavalero, D. W. Snyder, and B. Gil, Epitaxial Graphene Transistors: Enhancing Performance via Hydrogen, Nano Lett. Z, vol.11, issue.3880, 2011.

F. Sirotti, G. Cassabois, A. Ouerghi, F. Zhao, S. Li et al., Stacking Fault and Defects in Single Domain Multilayered Hexagonal Boron Nitride, 23101. (25) Yan
URL : https://hal.archives-ouvertes.fr/hal-01475792

Y. Zhao and F. Schopfer, Chem Soc Rev Chemistry and Physics of a Single Atomic Layer: Strategies and Challenges for Functionalization of Graphene and Graphene-Based Materials, 97?114. (26) Pallecchi, 2012.

W. Poirier, M. O. Goerbig, D. Mailly, and A. Ouerghi, Insulating to Relativistic Quantum Hall Transition in Disordered Graphene, Sci. Rep, vol.2013, issue.328, p.1791

E. Lhuillier and A. Ouerghi, Electrolytic Phototransistor Based on Graphene-MoS2 van Der Waals P-N Heterojunction with Tunable Photoresponse P-N Heterojunction with Tunable Photoresponse
URL : https://hal.archives-ouvertes.fr/hal-01438654

M. C. Asensio, A. Ouerghi, and O. Lancry, Band Alignment and Minigaps in Monolayer MoS2-Graphene van Der Waals Heterostructures, 4054?4061. (31) Boukhicha

A. Shukla, Anharmonic Phonons in Few-Layer MoS2: Raman Spectroscopy of Ultralow Energy Compression and Shear Modes
URL : https://hal.archives-ouvertes.fr/hal-01053511

S. Mattila and J. Leiro, Core level spectroscopy of MoS2, 5168?5175. (33) Kim, p.600, 2006.
DOI : 10.1016/j.susc.2006.08.038

K. Chen, F. Shi, F. Ruiz-zepeda, A. Ponce, M. Jose et al., Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS 2, 10551?10558. (34) Eda

M. Chhowalla, Photoluminescence from Chemically Exfoliated MoS2

P. Vinatier, D. Gonbeau, M. A. Baker, R. Gilmore, C. Lenardi et al., Photoelectron Spectroscopy: A Powerful Tool for a Better Characterization of Thin Film Materials XPS Investigation of Preferential Sputtering of S from MoS 2 and Determination of MoS X Stoichiometry from Mo and S Peak Positions A Comparison of Oxidation and Oxygen Substitution in MoS 2 Solid Film Lubricants, 5111?5116. (35) Levasseur 607?614. (36) Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene 1067?1075. (39) Han, S. W.; Cha, pp.255-262, 1999.

I. P. Address, S. Cristol, J. F. Paul, E. Payen, F. R. Hutschka et al., The Vibration Spectrum of Hydrogen Bound by Molybdenum Sulphide Catalysts C: Solid State Phys Theoretical Study of the MoS 2 (100) Surface: A Chemical Potential Analysis of Sulfur and Hydrogen Coverage, 11220?11229. (42) Spirko Electronic Structure and Reactivity of Defect MoS 2 II. Bonding and Activation of Hydrogen on Surface Defect Sites and Clusters, pp.4969-4983, 1981.

M. Batzill and E. Lhuillier, Direct Observation of Interlayer Hybridization and Dirac Relativistic Carriers in Graphene/MoS2 van Der Waals Heterostructures, 1135?1140. (44)

A. Balan, J. E. Rault, Y. J. Dappe, F. Bertran, P. Le-fe?vrefe?vre et al., Large Area Molybdenum Disulphide-Epitaxial Graphene Vertical Van Der Waals Heterostructures Illuminating the Dark Corridor in Graphene: Polarization Dependence of Angle- Resolved Photoemission Spectroscopy on Graphene Electronic Structure of Twisted Bilayers of graphene/MoS2 and MoS2/MoS2, 1?4. (46) Wang 4752?4758. (47) Ben Aziza Inhomogeneity of MoS 2 Monolayer on Epitaxial Graphene Bilayer in van Der Waals P-N Junction. Carbon 2016, pp.26656-26701, 2011.

A. Olivier, H. Yan, L. E. Brus, T. F. Heinz, K. ?. Hone et al., Anomalous Lattice Vibrations of Single-and Few-Layer MoS2 Hydrogenation-Induced Atomic Stripes on the 2 H -MoS 2 Surface Raman Spectroscopy Study of Lattice Vibration and Crystallographic Orientation of Monolayer mos2 under Uniaxial Strain Exceptional Tunability of Band Energy in a Compressively Strained Trilayer Pressure-induced semiconducting to metallic Transition in Multilayered Molybdenum Disulphide, From Bulk to Monolayer MoS 2: Evolution of Raman Scattering. Adv. Funct. Mater. 2012 2695?2700. (50) 2857?2861. (52), pp.7126-7131, 2010.

U. V. Waghmare and A. K. Sood, Symmetry-Dependent Phonon Renormalization in Monolayer MoS 2 Transistor, 2?5. (55)

N. Park, Y. Jun, and . Rsc, Advances Structure of MoS2 Induced by Molecular Hydrogen Treatment at Room Temperature, J, 2013.

J. H. Park, J. Kang, S. Y. Lee, Y. H. Lee, R. Agarwal et al., Seeded Growth of Highly Crystalline Molybdenum Disulphide Monolayers at Controlled Locations, Nat. Commun. 2015, vol.6, issue.57, p.6128

C. Basset, S. Kubsky, F. Sirotti, R. Garrett, I. Gentle et al., TEMPO: A New Insertion Device Beamline at SOLEIL for Time Resolved Photoelectron Spectroscopy Experiments on Solids and Interfaces, AIP Conf. Proc. 2009 185?188. (58) Lewis, p.1234, 2010.

H. Wang and D. A. Drabold, Advances and Applications in the FIREBALL Ab Initio Tight-Binding Molecular-Dynamics Formalism

P. Jelínek, P. Wang, H. Lewis, and J. , Status Solidi Basic Res, 1989?2007. (59), 2011.