# Tunable Doping in Hydrogenated Single Layered Molybdenum Disulfide

* Corresponding author
4 GMT - Groupe Modélisation et Théorie
IRAMIS - Institut Rayonnement Matière de Saclay, SPEC - UMR3680 - Service de physique de l'état condensé
Abstract : Structural defects in the molybdenum disul-fide (MoS$_2$) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS$_2$ electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in monolayered MoS$_2$ to tune its structural defects. We demonstrate that the electronic properties of single layer MoS$_2$ can be tuned from the intrinsic electron (n) to hole (p) doping via controlled exposure to atomic hydrogen at room temperature. Moreover, this hydrogenation process represents a viable technique to completely saturate the sulfur vacancies present in the MoS$_2$ flakes. The successful incorporation of hydrogen in MoS$_2$ leads to the modification of the electronic properties as evidenced by high resolution X-ray photoemission spectroscopy and density functional theory calculations. Micro-Raman spectroscopy and angle resolved photoemission spectroscopy measurements show the high quality of the hydrogenated MoS$_2$ confirming the efficiency of our hydrogenation process. These results demonstrate that the MoS$_2$ hydrogenation could be a significant and efficient way to achieve tunable doping of transition metal dichalcogenides (TMD) materials with non-TMD elements.
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Cited literature [28 references]

https://hal-cea.archives-ouvertes.fr/cea-01500564
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### Citation

Debora Pierucci, Hugo Henck, Zeineb Ben Aziza, Carl H. Naylor, Adrian Balan, et al.. Tunable Doping in Hydrogenated Single Layered Molybdenum Disulfide. ACS Nano, American Chemical Society, 2017, 11, pp.1755 - 1761. ⟨10.1021/acsnano.6b07661⟩. ⟨cea-01500564⟩

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