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Journal articles
Tunable Doping in Hydrogenated Single Layered Molybdenum Disulfide
Abstract : Structural defects in the molybdenum disul-fide (MoS$_2$) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS$_2$ electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in monolayered MoS$_2$ to tune its structural defects. We demonstrate that the electronic properties of single layer MoS$_2$ can be tuned from the intrinsic electron (n) to hole (p) doping via controlled exposure to atomic hydrogen at room temperature. Moreover, this hydrogenation process represents a viable technique to completely saturate the sulfur vacancies present in the MoS$_2$ flakes. The successful incorporation of hydrogen in MoS$_2$ leads to the modification of the electronic properties as evidenced by high resolution X-ray photoemission spectroscopy and density functional theory calculations. Micro-Raman spectroscopy and angle resolved photoemission spectroscopy measurements show the high quality of the hydrogenated MoS$_2$ confirming the efficiency of our hydrogenation process. These results demonstrate that the MoS$_2$ hydrogenation could be a significant and efficient way to achieve tunable doping of transition metal dichalcogenides (TMD) materials with non-TMD elements.
Cited literature [28 references]
https://hal-cea.archives-ouvertes.fr/cea-01500564
Contributor : Dominique Girard Connect in order to contact the contributor
Submitted on : Monday, April 3, 2017 - 2:22:52 PM
Last modification on : Monday, August 23, 2021 - 4:18:02 PM
Long-term archiving on: : Tuesday, July 4, 2017 - 12:58:56 PM
Contributor : Dominique Girard Connect in order to contact the contributor
Submitted on : Monday, April 3, 2017 - 2:22:52 PM
Last modification on : Monday, August 23, 2021 - 4:18:02 PM
Long-term archiving on: : Tuesday, July 4, 2017 - 12:58:56 PM
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