Université Paris-Saclay (Espace Technologique, Bat. Discovery - RD 128 - 2e ét., 91190 Saint-Aubin - France)
5UBC - University of British Columbia (Vancouver Campus, , 2329 West Mall, Vancouver, BC Canada V6T 1Z4 -
Okanagan Campus, 3333 University Way, Kelowna, BC Canada V1V 1V7 - Canada)
Abstract : Bulk NdNiO$_3$ and thin films grown along the pseudocubic (001)$_{pc}$ axis display a 1st order metal to insulator transition (MIT) together with a Néel transition at T = 200 K. Here, we show that for NdNiO$_3$ films deposited on (111)$_{pc}$ NdGaO$_3$, the MIT occurs at T = 335 K and the Néel transition at T = 230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries and lattice parameters, we demonstrate a particularly large tuning when the epitaxy is realized on (111)$_{pc}$ surfaces. We attribute this effect to the specific lattice matching conditions imposed along this direction when using orthorhombic substrates.
https://hal-cea.archives-ouvertes.fr/cea-01498292
Contributeur : Dominique Girard
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Soumis le : mercredi 29 mars 2017 - 17:53:48
Dernière modification le : mardi 17 avril 2018 - 20:42:02
Document(s) archivé(s) le : vendredi 30 juin 2017 - 17:02:55
S. Catalano, M. Gibert, V. Bisogni, F. He, R. Sutarto, et al.. Tailoring the electronic transitions of NdNiO$_3$ films through (111)$_{pc}$ oriented interfaces. APL Materials, AIP Publishing 2015, 3, pp. 062506 〈10.1063/1.4919803〉. 〈cea-01498292〉
