Tailoring the electronic transitions of NdNiO$_3$ films through (111)$_{pc}$ oriented interfaces - Archive ouverte HAL Access content directly
Journal Articles APL Materials Year : 2015

Tailoring the electronic transitions of NdNiO$_3$ films through (111)$_{pc}$ oriented interfaces

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Abstract

Bulk NdNiO$_3$ and thin films grown along the pseudocubic (001)$_{pc}$ axis display a 1st order metal to insulator transition (MIT) together with a Néel transition at T = 200 K. Here, we show that for NdNiO$_3$ films deposited on (111)$_{pc}$ NdGaO$_3$, the MIT occurs at T = 335 K and the Néel transition at T = 230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries and lattice parameters, we demonstrate a particularly large tuning when the epitaxy is realized on (111)$_{pc}$ surfaces. We attribute this effect to the specific lattice matching conditions imposed along this direction when using orthorhombic substrates.
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Dates and versions

cea-01498292 , version 1 (29-03-2017)

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S. Catalano, M. Gibert, V. Bisogni, F. He, R. Sutarto, et al.. Tailoring the electronic transitions of NdNiO$_3$ films through (111)$_{pc}$ oriented interfaces. APL Materials, 2015, 3, pp. 062506 ⟨10.1063/1.4919803⟩. ⟨cea-01498292⟩
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