Bandgap inhomogeneity of MoS$_2$ monolayer on epitaxial graphene bilayer in van der Waals p-n junction

Zeineb Ben Aziza; Hugo Henck; Daniela Di Felice; Debora Pierucci; Julien Chaste; Carl H. Naylor; Adrian Balan; Yannick J. Dappe; A.T. Charlie Johnson; Abdelkarim Ouerghi

Bandgap inhomogeneity of MoS$_2$ monolayer on epitaxial graphene bilayer in van der Waals p-n junction

Zeineb Ben Aziza ¹ Hugo Henck ¹ Daniela Di Felice ² Debora Pierucci ¹ Julien Chaste ¹ Carl H. Naylor ³ Adrian Balan ³ Yannick J. Dappe ² A.T. Charlie Johnson ³ Abdelkarim Ouerghi ^{1, *}

* Corresponding author

1 C2N - Centre de Nanosciences et de Nanotechnologies [Marcoussis]

2 GMT - Groupe Modélisation et Théorie

SPEC - UMR3680 - Service de physique de l'état condensé, IRAMIS - Institut Rayonnement Matière de Saclay

3 Department of Physics and Astronomy [Philadelphia]

Abstract : Atomically thin MoS$_2$/graphene vertical heterostructures are promising candidates for nanoelectronic and optoelectronic technologies.In this work, we studied the optical and electronic properties of n doped single layer MoS$_2$ on p doped bilayer graphene vdW heterostructures. We demonstrate a non-uniform strain between two different orientation angles of MoS$_2$ monolayer on top of epitaxial bilayer gra-phene. A significant downshift of the E$^1$$_{2_g}$ mode, a slight downshift of the A$_{1_g}$ mode, and photo-luminescence shift and quenching are observed between two MoS$_2$ monolayers differently oriented with respect to graphene; This could be mostly attributed to the strain-induced transition from direct to indirect bandgap in monolayer MoS$_2$. Moreover, our theoretical calculations about differently-strained MoS$_2$ monolayers are in a perfect accordance with the experimentally observed behavior of differently-oriented MoS$_2$ flakes on epitaxial bilayer graphene. Hence, our results show that strain-induced bandgap engineering of single layered MoS$_2$ is dependent on the orientation angle between stacked layers. These findings could be an interesting novel way to take advantage of the possibilities of MoS$_2$ and deeply exploit the capabilities of MoS$_2$/graphene van der Waals heterostructures.

Document type :

Journal articles

Domain :

Physics [physics]

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https://hal-cea.archives-ouvertes.fr/cea-01490885
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Submitted on : Thursday, March 16, 2017 - 10:30:55 AM
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Bandgap inhomogeneity of MoS$_2$ monolayer on epitaxial graphene bilayer in van der Waals p-n junction

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