The Ostwald ripening at nanoengineering of InAsSbP spherical and ellipsoidal quantum dots on InAs (100) surface

V.M. Aroutiounian 1 K.M. Gambaryan 1 V.G. Harutyunyan 1 Patrick Soukiassian 2 T Boeckel 3 J. Schmidtbauer 3 R. Bansen 3
1 Yerevan State University
2 LENSIS - Laboratoire d'Etude des NanoStructures et Imagerie de Surface
SPEC - UMR3680 - Service de physique de l'état condensé, IRAMIS - Institut Rayonnement Matière de Saclay
3 Leibnitz Institute for Crystal Growth
Abstract : We present the results of growth of quasi-ternary InAsSbP spherical and ellipsoidal quantum dots (QDs) on InAs (100) surface by the method of liquid-phase epitaxy. Coarsening of QDs due to coalescence and Ostwald ripening was investigated by atomic-force and scanning electron microscopy. Ellipsoidal QDs prolated in [010] and oblated in [001] directions have been grown. Elongation ratios for the ellipsoidal QDs were measured in all three directions. It is shown that elongation of spherical QDs to ellipsoidal is started at QDs diameter of ∼50 nm. Shape transformation of the QDs’ size distribution function from the Gram-Charlier-like to the Gaussian and then to the Lifshits-Slezov-like distribution was revealed at increasing the nucleation time.
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https://hal-cea.archives-ouvertes.fr/cea-01485602
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Submitted on : Thursday, March 9, 2017 - 10:26:58 AM
Last modification on : Wednesday, August 14, 2019 - 11:24:10 AM

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V.M. Aroutiounian, K.M. Gambaryan, V.G. Harutyunyan, Patrick Soukiassian, T Boeckel, et al.. The Ostwald ripening at nanoengineering of InAsSbP spherical and ellipsoidal quantum dots on InAs (100) surface. Journal of Contemporary Physics - armenian Academy of Sciences, 2013, ⟨10.3103/S1068337213010064⟩. ⟨cea-01485602⟩

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