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Quantum Hall effect in epitaxial graphene with permanent magnets

F. D. Parmentier 1, * T. Cazimajou 1 Y. Sekine 2 H. Hibino 2 H. Irie 2 D. C. Glattli 1 N. Kumada 1, 2 P. Roulleau 1 
* Corresponding author
1 GNE - Groupe Nano-Electronique
SPEC - UMR3680 - Service de physique de l'état condensé, IRAMIS - Institut Rayonnement Matière de Saclay
Abstract : We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.
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F. D. Parmentier, T. Cazimajou, Y. Sekine, H. Hibino, H. Irie, et al.. Quantum Hall effect in epitaxial graphene with permanent magnets. Scientific Reports, Nature Publishing Group, 2016, 6, pp.38393. ⟨10.1038/srep38393⟩. ⟨cea-01485227⟩



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