High resolution scanning near field mapping of enhancement on SERS substrates: comparison with photoemission electron microscopy

C. Awada 1 J. Plathier 1 C. Dab 1 Fabrice Charra 2 Ludovic Douillard 2 A. Ruediger 1
2 LEPO - Laboratoire d'Electronique et nanoPhotonique Organique
SPEC - UMR3680 - Service de physique de l'état condensé, IRAMIS - Institut Rayonnement Matière de Saclay
Abstract : The need for a dedicated spectroscopic technique with nanoscale resolution to characterize SERS substrates pushed us to develop a proof of concept of a functionalized tip–surface enhanced Raman scattering (FTERS) technique. We have been able to map hot spots on semi-continuous gold films; in order to validate our approach we compare our results with photoemission electron microscopy (PEEM) data, the complementary electron microscopy tool to map hot spots on random metallic surfaces. Enhanced Raman intensity maps at high spatial resolution reveal the localisation of hotspots at gaps for many neighboring nanostructures. Finally, we compare our findings with theoretical simulations of the enhancement factor distribution, which confirms a dimer effect as the dominant origin of hot spots.
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Article dans une revue
Physical Chemistry Chemical Physics, Royal Society of Chemistry, 2016, 18 (14), pp.9405 - 9411. 〈10.1039/C5CP08015K〉
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Soumis le : lundi 6 mars 2017 - 14:35:21
Dernière modification le : jeudi 15 mars 2018 - 15:06:40

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C. Awada, J. Plathier, C. Dab, Fabrice Charra, Ludovic Douillard, et al.. High resolution scanning near field mapping of enhancement on SERS substrates: comparison with photoemission electron microscopy. Physical Chemistry Chemical Physics, Royal Society of Chemistry, 2016, 18 (14), pp.9405 - 9411. 〈10.1039/C5CP08015K〉. 〈cea-01483780〉

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