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Journal articles

Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions

N. Barrett 1 D. M. Gottlob 2 C. Mathieu 1 C. Lubin 1 J. Passicousset 1 O. Renault 3 E. Martinez 4 
1 LENSIS - Laboratoire d'Etude des NanoStructures et Imagerie de Surface
SPEC - UMR3680 - Service de physique de l'état condensé, IRAMIS - Institut Rayonnement Matière de Saclay
2 Peter Grünberg Institute
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
4 CRO2 - Centre de Recherches en Oncologie biologique et Oncopharmacologie
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https://hal-cea.archives-ouvertes.fr/cea-01481549
Contributor : Dominique GIRARD Connect in order to contact the contributor
Submitted on : Thursday, March 2, 2017 - 4:58:06 PM
Last modification on : Tuesday, May 24, 2022 - 3:28:06 PM

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CEA | CNRS | UNIV-AMU | DRT | IRAMIS-SPEC | CEA-UPSAY | UNIV-PARIS-SACLAY | LETI | CEA-GRE | GS-ENGINEERING | IRAMIS | INSTITUT-SCIENCES-LUMIERE

Citation

N. Barrett, D. M. Gottlob, C. Mathieu, C. Lubin, J. Passicousset, et al.. Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions. Review of Scientific Instruments, American Institute of Physics, 2016, 87 (5), ⟨10.1063/1.4948597⟩. ⟨cea-01481549⟩

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