Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Access content directly
Journal Articles Review of Scientific Instruments Year : 2016
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cea-01481549 , version 1 (02-03-2017)

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N. Barrett, D. M. Gottlob, C. Mathieu, C. Lubin, J. Passicousset, et al.. Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions. Review of Scientific Instruments, 2016, 87 (5), ⟨10.1063/1.4948597⟩. ⟨cea-01481549⟩
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