Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions

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https://hal-cea.archives-ouvertes.fr/cea-01481549
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Submitted on : Thursday, March 2, 2017 - 4:58:06 PM
Last modification on : Monday, February 25, 2019 - 4:34:20 PM

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N. Barrett, D. M. Gottlob, C. Mathieu, C. Lubin, J. Passicousset, et al.. Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions. Review of Scientific Instruments, American Institute of Physics, 2016, 87 (5), ⟨10.1063/1.4948597⟩. ⟨cea-01481549⟩

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