Service interruption on Monday 11 July from 12:30 to 13:00: all the sites of the CCSD (HAL, EpiSciences, SciencesConf, AureHAL) will be inaccessible (network hardware connection).
Skip to Main content Skip to Navigation
Journal articles

Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions

Document type :
Journal articles
Complete list of metadata

https://hal-cea.archives-ouvertes.fr/cea-01481549
Contributor : Dominique GIRARD Connect in order to contact the contributor
Submitted on : Thursday, March 2, 2017 - 4:58:06 PM
Last modification on : Tuesday, May 24, 2022 - 3:28:06 PM

Identifiers

Citation

N. Barrett, D. M. Gottlob, C. Mathieu, C. Lubin, J. Passicousset, et al.. Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions. Review of Scientific Instruments, American Institute of Physics, 2016, 87 (5), ⟨10.1063/1.4948597⟩. ⟨cea-01481549⟩

Share

Metrics

Record views

24