Bi atoms mobility-driven circular domains at the Bi/InAs(111) interface - Archive ouverte HAL Access content directly
Journal Articles Surface Science Year : 2016

Bi atoms mobility-driven circular domains at the Bi/InAs(111) interface

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Abstract

Bi films deposited on InAs(111) A and B sides have been studied by photoemission electron microscopy. A series of snapshots acquired during sequential annealing of the interfaces at temperatures below and above the melting temperature of Bi allowed obtaining a comprehensive image of the topographic and chemical evolutions of the Bi films that are found to be InAs side dependent. On the A side, a morphology of circular patterns controlled by Bi atoms mobility is observed. The patterns are formed on the pristine In-terminated InAs(111) surface covered by a weakly bonded Bi bilayer. On the B side, no particular morphology is observed due to a stronger chemical interaction between Bi and As atoms as evidenced by the spatially-resolved core-level photoelectron spectra.
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Dates and versions

cea-01481529 , version 1 (02-03-2017)

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M C Richter, J M Mariot, C M Gafoor, L Nicolaï, O. Heckmann, et al.. Bi atoms mobility-driven circular domains at the Bi/InAs(111) interface. Surface Science, 2016, 651, pp.147 - 153. ⟨10.1016/j.susc.2016.03.032⟩. ⟨cea-01481529⟩
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