Enhanced photoanode properties of epitaxial Ti doped α-Fe 2 O 3 (0001) thin films

Hélène Magnan (1) , D. Stanescu (1) , M. Rioult (2) , E. Fonda (2) , A. Barbier (1)

1 LNO - Laboratoire Nano-Magnétisme et Oxydes
2 SSOLEIL - Synchrotron SOLEIL

The growth, crystal and electronic structures, and photo-electrochemical properties of undoped and Ti doped hematite epitaxial films were studied. We evidence that Ti4+ substitutes Fe3+ in the hematite lattice inducing a slight modification of the oxygen octahedron. Ti doping is shown to induce a shift of the valence band toward higher binding energy due to a movement of the Fermi level toward the conduction band. The resulting modification of electrical conductivity appears as a possible origin of the improvement of photo-electrochemical properties in the doped sample.

Domains: Physics [physics]

Hélène Magnan, D. Stanescu, M. Rioult, E. Fonda, A. Barbier. Enhanced photoanode properties of epitaxial Ti doped α-Fe 2 O 3 (0001) thin films. Applied Physics Letters, 2012, 101 (13), ⟨10.1063/1.4755763⟩. ⟨cea-01481351⟩