Enhanced photoanode properties of epitaxial Ti doped α-Fe 2 O 3 (0001) thin films

Hélène Magnan 1 D. Stanescu 1 M. Rioult 2 E. Fonda 2 A. Barbier 1
1 LNO - Laboratoire Nano-Magnétisme et Oxydes
SPEC - UMR3680 - Service de physique de l'état condensé, IRAMIS - Institut Rayonnement Matière de Saclay
Abstract : The growth, crystal and electronic structures, and photo-electrochemical properties of undoped and Ti doped hematite epitaxial films were studied. We evidence that Ti4+ substitutes Fe3+ in the hematite lattice inducing a slight modification of the oxygen octahedron. Ti doping is shown to induce a shift of the valence band toward higher binding energy due to a movement of the Fermi level toward the conduction band. The resulting modification of electrical conductivity appears as a possible origin of the improvement of photo-electrochemical properties in the doped sample.
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Article dans une revue
Applied Physics Letters, American Institute of Physics, 2012, 101 (13), 〈10.1063/1.4755763〉
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Soumis le : jeudi 2 mars 2017 - 14:51:18
Dernière modification le : vendredi 16 mars 2018 - 01:15:04

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Hélène Magnan, D. Stanescu, M. Rioult, E. Fonda, A. Barbier. Enhanced photoanode properties of epitaxial Ti doped α-Fe 2 O 3 (0001) thin films. Applied Physics Letters, American Institute of Physics, 2012, 101 (13), 〈10.1063/1.4755763〉. 〈cea-01481351〉

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