Interface electronic structure in a metal/ferroelectric heterostructure under applied bias

J.E. Rault; T. Maroutian; G. Agnus; Ph. Lecoeur; G. Niu; M. G. Silly; B. Vilquin; A. Bendounan; F. Sirotti; N. Barrett

Interface electronic structure in a metal/ferroelectric heterostructure under applied bias

J.E. Rault ¹ T. Maroutian ² G. Agnus ² Ph. Lecoeur ² G. Niu ³ M. G. Silly ⁴ B. Vilquin ³ A. Bendounan ⁴ F. Sirotti ⁴ N. Barrett ^{1, *}

* Corresponding author

1 SPCSI - Service de Physique et de Chimie des Surfaces et Interfaces

2 IEF - Institut d'électronique fondamentale

3 INL - H&N - INL - Hétéroepitaxie et Nanostructures

INL - Institut des Nanotechnologies de Lyon

4 SSOLEIL - Synchrotron SOLEIL

Abstract : The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO$_3$ /Nb-doped SrTiO$_3$ , under in-situ bias voltage is investigated using x-ray photoelectron spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.

Document type :

Journal articles

Domain :

Physics [physics]

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PhysRevB.87.155146.pdf

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