Interface electronic structure in a metal/ferroelectric heterostructure under applied bias

Abstract : The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO$_3$ /Nb-doped SrTiO$_3$ , under in-situ bias voltage is investigated using x-ray photoelectron spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.
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Physical Review B : Condensed matter and materials physics, American Physical Society, 2013, 87, pp.155146. 〈10.1103/PhysRevB.87.155146〉
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PhysRevB.87.155146.pdf
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J.E. Rault, T. Maroutian, G. Agnus, Ph. Lecoeur, G. Niu, et al.. Interface electronic structure in a metal/ferroelectric heterostructure under applied bias. Physical Review B : Condensed matter and materials physics, American Physical Society, 2013, 87, pp.155146. 〈10.1103/PhysRevB.87.155146〉. 〈cea-01477666〉

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