 |
Journal articles
Interface electronic structure in a metal/ferroelectric heterostructure under applied bias
Abstract : The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO$_3$ /Nb-doped SrTiO$_3$ , under in-situ bias voltage is investigated using x-ray photoelectron spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.
Cited literature [35 references]
https://hal-cea.archives-ouvertes.fr/cea-01477666
Contributor : Dominique Girard <>
Submitted on : Monday, February 27, 2017 - 3:40:23 PM
Last modification on : Thursday, June 3, 2021 - 3:14:39 AM
Long-term archiving on: : Sunday, May 28, 2017 - 2:06:57 PM
Contributor : Dominique Girard <>
Submitted on : Monday, February 27, 2017 - 3:40:23 PM
Last modification on : Thursday, June 3, 2021 - 3:14:39 AM
Long-term archiving on: : Sunday, May 28, 2017 - 2:06:57 PM
File
PhysRevB.87.155146.pdf
Files produced by the author(s)