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Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2013

Interface electronic structure in a metal/ferroelectric heterostructure under applied bias

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Abstract

The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO$_3$ /Nb-doped SrTiO$_3$ , under in-situ bias voltage is investigated using x-ray photoelectron spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.
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cea-01477666 , version 1 (27-02-2017)

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J.E. Rault, T. Maroutian, G. Agnus, Ph. Lecoeur, G. Niu, et al.. Interface electronic structure in a metal/ferroelectric heterostructure under applied bias. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 87, pp.155146. ⟨10.1103/PhysRevB.87.155146⟩. ⟨cea-01477666⟩
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