Polarization Sensitive Surface Band Structure of Doped BaTi$O_3$ (001)

J.E. Rault; J. Dionot; C. Mathieu; V. Feyer; C.M. Schneider; G. Geneste; N. Barrett

doi:10.1103/PhysRevLett.111.127602

Polarization Sensitive Surface Band Structure of Doped BaTi$O_3$ (001)

J.E. Rault ¹ J. Dionot ¹ C. Mathieu ¹ V. Feyer ² C.M. Schneider ² G. Geneste ³ N. Barrett ^{1, *}

* Auteur correspondant

1 SPCSI - Service de Physique et de Chimie des Surfaces et Interfaces

2 Peter Grünberg Institute

3 DAM/DIF - DAM Île-de-France

Abstract : We present a spatial and wave-vector resolved study of the electronic structure of micron sized ferroelectric domains at the surface of a BaTi$O_3$ (001) single crystal. The n-type doping of the BaTi$O_3$ is controlled by in situ vacuum and oxygen annealing, providing experimental evidence of a surface paraelectric-ferroelectric transition below a critical doping level. Real space imaging of photoemission threshold, core level and valence band spectra show contrast due to domain polarization. Reciprocal space imaging of the electronic structure using linearly polarized light provides unambiguous evidence for the presence of both in-and out-of-plane polarization with two-and fourfold symmetry, respectively. The results agree well with first principles calculations.

Type de document :

Article dans une revue

Physical Review Letters, American Physical Society, 2013, 111, pp.127602. 〈10.1103/PhysRevLett.111.127602〉

Domaine :

Physique [physics]

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