in \Quantum Coherence in Mesoscopic Systems, B. Kramers Ed. (NATO Adv. Studies, Plenum New- J. Phys. France, vol.51, p.167, 1990. ,
A theory of magnetoconductance in Anderson insulators, Journal de Physique I, vol.1, issue.7, p.985, 1991. ,
DOI : 10.1051/jp1:1991181
URL : https://hal.archives-ouvertes.fr/jpa-00246390
Magnetoconductance of Anderson Insulators in the Presence of Strong Spin-Orbit Scattering: A Simple Approach, Europhysics Letters (EPL), vol.17, issue.8, p.721, 1992. ,
DOI : 10.1209/0295-5075/17/8/010
1586 Sov, Fiz. Tekh. Poluprovodn. Phys. Semicond. J. Phys. A Phys. Rev. Lett, vol.8, issue.250, pp.0-46, 1974. ,
Electronic Properties of doped semiconductors, Series in Solid State Sciences Pour la loi de Mott voir Chapitre 9, pages 202 a 208 pour le gap de Coulomb v oir Chapitre 10, pp.228-230, 1984. ,
DOI : 10.1007/978-3-662-02403-4
Low temperature effects in Si FETs, Solid-State Electronics, vol.8, issue.1, p.82, 1965. ,
DOI : 10.1016/0038-1101(65)90011-0
Dimensional crossover in the hopping regime induced by an electric field, Physical Review Letters, vol.64, issue.19, p.2293, 1990. ,
DOI : 10.1103/PhysRevLett.64.2293
562 Pis'ma Zh, Eksp. Teor. Fiz. Raikh M.E., Ruzin I.M., Sov. Phys. JETP, vol.43, issue.65, p.1273, 1986. ,
Hopping Conductivity in One Dimension, Physical Review B, vol.8, issue.2, p.922, 1973. ,
DOI : 10.1103/PhysRevB.8.922
Conductance statistics in small insulating GaAs:Si wires at low temperature. II: experimental study, Journal de Physique I, vol.3, issue.11, p.2321, 1993. ,
DOI : 10.1051/jp1:1993248
URL : https://hal.archives-ouvertes.fr/jpa-00246871
in \Hopping and related phenomena, Proceedings of 6th international conference on Racah Institute of Physics, the Hebrew university, p.309 ,
Effect of Inelastic Processes on Resonant Tunneling in One Dimension, Physical Review Letters, vol.54, issue.11, p.1196, 1985. ,
DOI : 10.1103/PhysRevLett.54.1196
Phy s . I F rance 3, p.2342, 1993. ,
540 Pis'ma Zh, JETP Lett. Eksp. Teor. Fiz. Phys. JETP Zh. Eksp. Teor. Fiz, vol.43, issue.93, pp.72-743, 1986. ,
416 voir aussi Can, Proc. Phys. Soc. A 6, p.1356, 1949. ,
electrons en exc es sur l'^ le donne E c (N = 1) = 0 Ceci nous semble contredire les r esultats des exp eriences o u le blocage de Coulomb est obtenu sur une seule ^ le. Il nous semble que le raisonement utilis e oublie de prendre en compte la polarisation de l'^ le lorsque l'on approche de l'innni une seule charge en exc es. On peut lire a ce sujet la th e s e d e C ,
144 ou encore Pour une revue sur le blocage de Coulomb dans les semi-conducteurs, Pour des revues sur le blocage de Coulomb dans les m etaux \Mesoscopic Phenomena in Solids, B.L. Alt'shuler \Single Charge Tunneling, pp.44-1646, 1988. ,
Compte-rendu de \Low T emperature Detectors" n 5, J. Low T emperature Phys, 1993. ,
Electron-phonon coupling and hot-electron effects in doped semiconductors near 50 mK, Journal of Low Temperature Physics, vol.1, issue.Suppl.26?3, p.313, 1993. ,
DOI : 10.1007/BF00693439
Coulomb Gap in Sodium Tungsten Bronzes, Physical Review Letters, vol.57, issue.4, p.475, 1986. ,
DOI : 10.1103/PhysRevLett.57.475
Single-electron charging effects in insulating wires, Physical Review Letters, vol.67, issue.20, p.2862, 1991. ,
DOI : 10.1103/PhysRevLett.67.2862
Disappearance of the Coulomb charging energy and low-temperature resistivity of granular metals, Physical Review B, vol.43, issue.17, p.14274, 1991. ,
DOI : 10.1103/PhysRevB.43.14274
Feature article: Electronic transport in granular metal films???, Philosophical Magazine Part B, vol.80, issue.3, p.357, 1992. ,
DOI : 10.1103/PhysRevLett.55.2692