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X-ray diffraction imaging of metal–oxide epitaxial tunnel junctions made by optical lithography: use of focused and unfocused X-ray beams

Abstract : X-ray diffraction techniques are used in imaging mode in order to characterize micrometre-sized objects. The samples used as models are metal–oxide tunnel junctions made by optical lithography, with lateral sizes ranging from 150 µm down to 10 µm and various shapes: discs, squares and rectangles. Two approaches are described and compared, both using diffraction contrast: full-field imaging (topography) and raster imaging (scanning probe) using a micrometre-sized focused X-ray beam. It is shown that the full-field image gives access to macroscopic distortions (e.g. sample bending), while the local distortions, at the micrometre scale (e.g. tilts of the crystalline planes in the vicinity of the junction edges), can be accurately characterized only using focused X-ray beams. These local defects are dependent on the junction shape and larger by one order of magnitude than the macroscopic curvature of the sample.
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https://hal-cea.archives-ouvertes.fr/cea-01384342
Contributor : Dominique Girard <>
Submitted on : Wednesday, October 19, 2016 - 5:00:54 PM
Last modification on : Monday, February 10, 2020 - 6:14:05 PM

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Cristian Mocuta, Antoine Barbier, Stefan Stanescu, Sylvia Matzen, Jean-Baptiste Moussy, et al.. X-ray diffraction imaging of metal–oxide epitaxial tunnel junctions made by optical lithography: use of focused and unfocused X-ray beams. Journal of Synchrotron Radiation, International Union of Crystallography, 2013, 20 (2), pp.355 - 365. ⟨10.1107/S090904951204856X⟩. ⟨cea-01384342⟩

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