The Bottom-up Growth of Edge Specific Graphene Nanoribbons - Archive ouverte HAL Access content directly
Journal Articles Nano Letters Year : 2014

The Bottom-up Growth of Edge Specific Graphene Nanoribbons

(1) , (1) , (2) , (2) , (3) , (3) , (3) , (1)
1
2
3

Abstract

The discovery of ballistic transport in graphene grown on SiC(0001) sidewall trenches has sparked an intense effort to uncover the origin of this exceptional conductivity. How a ribbon's edge termination, width, and topography influence its transport is not yet understood. This work presents the first structural and electronic comparison of sidewall graphene grown with different edge terminations. We show that armchair and zigzag terminated ribbons, grown from SiC, have very different topographies and interact differently with the substrate, properties that are critical to device architecture in sidewall ribbon electronics.
Not file

Dates and versions

cea-01376735 , version 1 (05-10-2016)

Identifiers

Cite

M. S. Nevius, F. Wang, C. Mathieu, N. Barrett, A. Sala, et al.. The Bottom-up Growth of Edge Specific Graphene Nanoribbons. Nano Letters, 2014, 14, pp.6080 - 6086. ⟨10.1021/nl502942z⟩. ⟨cea-01376735⟩
37 View
1 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More