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Journal articles
Reversible switching of in-plane polarized ferroelectric domains in BaTiO3(001) with very low energy electrons
Abstract : The switchable bipolar ground state is at the heart of research into ferroelectrics for future, low-energy electronics. Polarization switching by an applied field is a complex phenomenon which depends on the initial domain ordering, defect concentration, electrical boundary conditions and charge screening. Injected free charge may also to be used to reversibly switch in-plane polarized domains. We show that the interaction between the initial domain order and the bulk screening provided by very low energy electrons switches the polarization without the collateral radiation damage which occurs when employing a beam of high energy electrons. Polarization switching during charge injection adds a new dimension to the multifunctionality of ferroelectric oxides.
Cited literature [33 references]
https://hal-cea.archives-ouvertes.fr/cea-01376728
Contributor : Dominique Girard Connect in order to contact the contributor
Submitted on : Wednesday, October 5, 2016 - 3:10:08 PM
Last modification on : Friday, April 23, 2021 - 3:15:32 AM
Long-term archiving on: : Friday, January 6, 2017 - 1:33:54 PM
Contributor : Dominique Girard Connect in order to contact the contributor
Submitted on : Wednesday, October 5, 2016 - 3:10:08 PM
Last modification on : Friday, April 23, 2021 - 3:15:32 AM
Long-term archiving on: : Friday, January 6, 2017 - 1:33:54 PM
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srep06792.pdf
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