Absorbing/emitting phonons with one dimensional MOSFETs

Riccardo Bosisio 1, * Cosimo Gorini 1 Geneviève Fleury 1 Jean-Louis Pichard 1
* Auteur correspondant
1 GMT - Groupe Modélisation et Théorie
SPEC - UMR3680 - Service de physique de l'état condensé, IRAMIS - Institut Rayonnement Matière de Saclay
Abstract : We consider nanowires in the field effect transistor device configuration. Modeling each nanowire as a one dimensional lattice with random site potentials, we study the heat exchanges between the nanowire electrons and the substrate phonons, when electron transport is due to phonon-assisted hops between localized states. Shifting the nanowire conduction band with a metallic gate induces different behaviors. When the Fermi potential is located near the band center, a bias voltage gives rise to small local heat exchanges which fluctuate randomly along the nanowire. When it is located near one of the band edges, the bias voltage yields heat currents which flow mainly from the substrate towards the nanowire near one boundary of the nanowire, and in the opposite direction near the other boundary. This opens interesting perspectives for heat management at submicron scales: arrays of parallel gated nanowires could be used for a field control of phonon emission/absorption.
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Physica E: Low-dimensional Systems and Nanostructures, 2015, 74, pp.340-346. 〈http://www.sciencedirect.com/science/article/pii/S1386947716301084〉. 〈10.1016/j.physe.2015.07.012〉
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Riccardo Bosisio, Cosimo Gorini, Geneviève Fleury, Jean-Louis Pichard. Absorbing/emitting phonons with one dimensional MOSFETs. Physica E: Low-dimensional Systems and Nanostructures, 2015, 74, pp.340-346. 〈http://www.sciencedirect.com/science/article/pii/S1386947716301084〉. 〈10.1016/j.physe.2015.07.012〉. 〈cea-01366466〉

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