W. De-heer, C. Berger, X. Wu, P. First, E. Conrad et al., Epitaxial graphene, Solid State Communications, vol.143, issue.1-2, p.92, 2007.
DOI : 10.1016/j.ssc.2007.04.023
URL : https://hal.archives-ouvertes.fr/hal-00911214

J. Hass, W. De-heer, and E. Conrad, The growth and morphology of epitaxial multilayer graphene, Journal of Physics: Condensed Matter, vol.20, issue.32, pp.323202-323214, 2008.
DOI : 10.1088/0953-8984/20/32/323202

Y. Hu, Production and properties of epitaxial graphene on carbon terminated face of hexagonal silicon carbide

Z. Guo, R. Dong, P. Chakraborty, N. Lourenco, J. Palmer et al., Record Maximum Oscillation Frequency in C-Face Epitaxial Graphene Transistors, Nano Letters, vol.13, issue.3, p.942, 2013.
DOI : 10.1021/nl303587r
URL : https://hal.archives-ouvertes.fr/hal-00911215

F. Wang, G. Liu, S. Rothwell, M. Nevius, A. Tejeda et al., Wide-Gap Semiconducting Graphene from Nitrogen-Seeded SiC, Nano Letters, vol.13, issue.10, p.4827, 2013.
DOI : 10.1021/nl402544n
URL : https://hal.archives-ouvertes.fr/hal-01273660

T. Low and F. Guinea, Strain-Induced Pseudomagnetic Field for Novel Graphene Electronics, Nano Letters, vol.10, issue.9, p.3551, 2010.
DOI : 10.1021/nl1018063

T. Low, F. Guinea, and M. Katsnelson, Gaps tunable by electrostatic gates in strained graphene, Physical Review B, vol.83, issue.19, 2011.
DOI : 10.1103/PhysRevB.83.195436

J. Hicks, K. Shepperd, F. Wang, and E. Conrad, The structure of graphene grown on the SiC $(0\,0\,0\bar{1})$ surface, Journal of Physics D: Applied Physics, vol.45, issue.15, p.154002, 2012.
DOI : 10.1088/0022-3727/45/15/154002

W. De-heer, C. Berger, M. Ruan, M. Sprinkle, X. Li et al., Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide, Proceedings of the National Academy of Sciences, vol.108, issue.41, p.16900, 2011.
DOI : 10.1073/pnas.1105113108
URL : https://hal.archives-ouvertes.fr/hal-00911226

J. Moon, D. Curtis, M. Hu, D. Wong, P. Campbell et al., Development toward wafer-scale graphene RF electronics. Topical meeting on silicon monolithic integrated circuits in RF systems, SiRF), vol.1, pp.11-14, 2010.

F. Wang, K. Shepperd, J. Hicks, M. Nevius, H. Tinkey et al., Silicon intercalation into the graphene-SiC interface, Physical Review B, vol.85, issue.16, pp.165449-165455, 2012.
DOI : 10.1103/PhysRevB.85.165449

H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi et al., from quantized oscillation in reflectivity of low-energy electrons, Physical Review B, vol.77, issue.7, p.75413, 2008.
DOI : 10.1103/PhysRevB.77.075413

K. Emtsev, F. Speck, S. Th, L. Ley, and J. Riley, Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study, Physical Review B, vol.77, issue.15, p.155303, 2008.
DOI : 10.1103/PhysRevB.77.155303

M. Nevius, F. Wang, C. Mathieu, N. Barrett, A. Sala et al., The Bottom-up Growth of Edge Specific Graphene Nanoribbons, Nano Letters, vol.14, issue.11, 2014.
DOI : 10.1021/nl502942z
URL : https://hal.archives-ouvertes.fr/cea-01376735

M. Kusunoki, T. Suzuki, K. Kaneko, and M. Ito, Formation of self-aligned carbon nanotube films by surface decomposition of silicon carbide, Philosophical Magazine Letters, vol.79, issue.4, p.153, 1999.
DOI : 10.1080/095008399177381

M. Sprinkle, J. Hicks, A. Tejeda, A. Taleb-ibrahimi, L. Fèvre et al., Multilayer epitaxial graphene grown on the ({\rm SiC}\,\,000\bar{1}) surface; structure and electronic properties, Journal of Physics D: Applied Physics, vol.43, issue.37, p.374006, 2010.
DOI : 10.1088/0022-3727/43/37/374006

T. Mentes-ß and A. Locatelli, Angle-resolved X-ray photoemission electron microscopy, J Electron Spectrosc Relat Phenom, vol.185, p.32317329, 2012.

K. Knox, S. Wang, A. Morgante, D. Cvetko, A. Locatelli et al., Spectromicroscopy of single and multilayer graphene supported by a weakly interacting substrate, Physical Review B, vol.78, issue.20, p.201408, 2008.
DOI : 10.1103/PhysRevB.78.201408

W. Norimatsu and M. Kusunoki, Growth of graphene from SiC{0001} surfaces and its mechanisms, Semiconductor Science and Technology, vol.29, issue.6, p.64009, 2014.
DOI : 10.1088/0268-1242/29/6/064009

G. Liu, A. Ahyi, Y. Xu, T. Isaacs-smith, Y. Sharma et al., Enhanced Inversion Mobility on 4H-SiC <formula formulatype="inline"><tex Notation="TeX">$(\hbox{11}\overline{\hbox{2}} \hbox{0})$</tex></formula> Using Phosphorus and Nitrogen Interface Passivation, IEEE Electron Device Letters, vol.34, issue.2, p.181, 2013.
DOI : 10.1109/LED.2012.2233458

J. Yeh and I. Lindau, Atomic subshell photoionization cross sections and asymmetry parameters: 1 ??? Z ??? 103, Atomic Data and Nuclear Data Tables, vol.32, issue.1, 1985.
DOI : 10.1016/0092-640X(85)90016-6

J. Yeh, Atomic calculations of photoionization cross sections and asymmetry parameters, 1993.

A. Locatelli, L. Aballe, T. Mentes-ß, M. Kiskinova, and E. Bauer, Photoemission electron microscopy with chemical