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Journal Articles IEEE Electron Device Letters Year : 2011

High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs

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Abstract

—The top-down fabrication of doped p-type silicon-nanowired (NW) arrays and their application as gas detectors is presented. After surface functionalization with 3-(4-ethynyl-benzyl)-1, 5, 7-trimethyl-3-azabicyclo [3.3.1] nonane-7-methanol molecules, the wires were subjected to an organophosphorous simulant, and both static and dynamic measurements were performed. A current gain of 4 × 10 6 is obtained upon the detection of the subpart-per-million concentration of a nerve-agent simu-lant. This represents a four-decade improvement over previous demonstration based on nanoribbons, proving better sensing capabilities of NWs. Technology-computer-aided-design simulations before and after gas detection have been performed to gain insight into the physical mechanisms involved in the gas detection and to investigate the impact of the surface-to-volume ratio on sensor sensitivity.
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Dates and versions

cea-01344105 , version 1 (11-07-2016)

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Vikram Passi, Florent Ravaux, Emmanuel Dubois, Simon Clavaguera, Alexandre Carella, et al.. High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs. IEEE Electron Device Letters, 2011, 32, pp.1-3. ⟨10.1109/LED.2011.2146750⟩. ⟨cea-01344105⟩
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