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Journal articles
High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs
Abstract : —The top-down fabrication of doped p-type silicon-nanowired (NW) arrays and their application as gas detectors is presented. After surface functionalization with 3-(4-ethynyl-benzyl)-1, 5, 7-trimethyl-3-azabicyclo [3.3.1] nonane-7-methanol molecules, the wires were subjected to an organophosphorous simulant, and both static and dynamic measurements were performed. A current gain of 4 × 10 6 is obtained upon the detection of the subpart-per-million concentration of a nerve-agent simu-lant. This represents a four-decade improvement over previous demonstration based on nanoribbons, proving better sensing capabilities of NWs. Technology-computer-aided-design simulations before and after gas detection have been performed to gain insight into the physical mechanisms involved in the gas detection and to investigate the impact of the surface-to-volume ratio on sensor sensitivity.
Cited literature [14 references]
https://hal-cea.archives-ouvertes.fr/cea-01344105
Contributor : Simon Clavaguera Connect in order to contact the contributor
Submitted on : Monday, July 11, 2016 - 1:09:51 PM
Last modification on : Friday, December 3, 2021 - 4:04:11 PM
Long-term archiving on: : Wednesday, October 12, 2016 - 12:21:56 PM
Contributor : Simon Clavaguera Connect in order to contact the contributor
Submitted on : Monday, July 11, 2016 - 1:09:51 PM
Last modification on : Friday, December 3, 2021 - 4:04:11 PM
Long-term archiving on: : Wednesday, October 12, 2016 - 12:21:56 PM
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