Electrografted Fluorinated Organic Ultrathin Film as Efficient Gate Dielectric in MoS 2 Transistors - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Access content directly
Journal Articles Journal of Physical Chemistry C Year : 2016

Electrografted Fluorinated Organic Ultrathin Film as Efficient Gate Dielectric in MoS 2 Transistors

Abstract

Dielectric films with nanometer thickness play a central role in the performances of field effect transistors (FETs). In this article, a new class of organic gate dielectric based on the electrochemical grafting of diazonium salts on metallic electrodes is investigated. The versatile diazonium salt strategy is a local and room-temperature process that provides robustness and performances. Moreover, this process produces ultrathin (4−8 nm) and smooth films. To prove their efficiency as gate dielectric, they were integrated in MoS 2 −FETs gate stacks. The devices display excellent switching behavior for reduced gate bias swing (down to 1 V) and suppressed hysteresis thanks to the highly hydrophobic nature of the fluorinated grafted film. Furthermore, the devices exhibit steep subthreshold slopes (as low as 110 mV/decade), demonstrating excellent gate coupling.
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Dates and versions

cea-01332017 , version 1 (15-06-2016)

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Hugo Casademont, Laure Fillaud, Xavier Lefèvre, Bruno Jousselme, Vincent Derycke. Electrografted Fluorinated Organic Ultrathin Film as Efficient Gate Dielectric in MoS 2 Transistors. Journal of Physical Chemistry C, 2016, 120, pp.9506-9510. ⟨10.1021/acs.jpcc.6b01630⟩. ⟨cea-01332017⟩
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