F. Hatami, M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, R. Heitz et al., Carrier dynamics in type-II GaSb/GaAs quantum dots, Physical Review B, vol.57, issue.8, p.4635, 1998.
DOI : 10.1103/PhysRevB.57.4635

N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laügt et al., Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells, Journal of Applied Physics, vol.86, issue.7, p.3714, 1999.
DOI : 10.1063/1.371241

C. Morhain, T. Bretagnon, P. Lefebvre, X. Tang, P. Valvin et al., quantum wells, Physical Review B, vol.72, issue.24, p.241305, 2005.
DOI : 10.1103/PhysRevB.72.241305
URL : https://hal.archives-ouvertes.fr/hal-01304535

F. Bernardini, V. Fiorentini, and D. Vanderbilt, Spontaneous polarization and piezoelectric constants of III-V nitrides, Physical Review B, vol.56, issue.16, p.10024, 1997.
DOI : 10.1103/PhysRevB.56.R10024

P. Lefebvre, J. Alì-egre, B. Gil, H. Mathieu, N. Grandjean et al., Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells, Physical Review B, vol.59, issue.23, p.15363, 1999.
DOI : 10.1103/PhysRevB.59.15363
URL : https://hal.archives-ouvertes.fr/hal-01302335

R. Cingolani, A. Botchkarev, H. Tang, H. Morkoç, G. Traetta et al., quantum wells: Impact on the optical spectra, Physical Review B, vol.61, issue.4, p.2711, 2000.
DOI : 10.1103/PhysRevB.61.2711

S. Kako, M. Miyamura, K. Tachibana, K. Hoshino, and Y. Arakawa, Size-dependent radiative decay time of excitons in GaN/AlN self-assembled quantum dots, Applied Physics Letters, vol.83, issue.5, p.984, 2003.
DOI : 10.1063/1.1596382

S. Kalliakos, P. Lefebvre, and T. Taliercio, Nonlinear behavior of photoabsorption in hexagonal nitride quantum wells due to free carrier screening of the internal fields, Physical Review B, vol.67, issue.20, p.205307, 2003.
DOI : 10.1103/PhysRevB.67.205307
URL : https://hal.archives-ouvertes.fr/hal-01303911

]. P. Lefebvre, S. Kalliakos, T. Bretagnon, P. Valvin, T. Taliercio et al., quantum well after high photoexcitation, Physical Review B, vol.69, issue.3, p.35307, 2004.
DOI : 10.1103/PhysRevB.69.035307
URL : https://hal.archives-ouvertes.fr/hal-01303935

T. Bretagnon, P. Lefebvre, P. Valvin, R. Bardoux, T. Guillet et al., quantum dots, Physical Review B, vol.73, issue.11, p.113304, 2006.
DOI : 10.1103/PhysRevB.73.113304
URL : https://hal.archives-ouvertes.fr/hal-00633272

O. Moshe, D. H. Rich, S. Birner, M. Povolotskyi, B. Damilano et al., Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation, Journal of Applied Physics, vol.108, issue.8, p.83510, 2010.
DOI : 10.1063/1.3490199

J. M. Gérard, O. Cabrol, and B. Sermage, InAs quantum boxes: Highly efficient radiative traps for light emitting devices on Si, Applied Physics Letters, vol.68, issue.22, p.3123, 1996.
DOI : 10.1063/1.115798

F. Furtmayr, J. Teubert, P. Becker, S. Conesa-boj, J. R. Morante et al., 1), Physical Review B, vol.84, issue.20, p.205303, 2011.
DOI : 10.1103/PhysRevB.84.205303
URL : https://hal.archives-ouvertes.fr/in2p3-00577207

M. Tchernycheva, L. Nevou, L. Doyennette, F. H. Julien, E. Warde et al., quantum wells, Physical Review B, vol.73, issue.12, p.125347, 2006.
DOI : 10.1103/PhysRevB.73.125347
URL : https://hal.archives-ouvertes.fr/hal-01067389

J. Renard, P. K. Kandaswamy, E. Monroy, and B. Gayral, Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots, Applied Physics Letters, vol.95, issue.13, p.131903, 2009.
DOI : 10.1063/1.3238311

J. Renard, R. Songmuang, G. Tourbot, C. Bougerol, B. Daudin et al., Evidence for quantum-confined Stark effect in GaN/AlN quantum dots in nanowires, Physical Review B, vol.80, issue.12, p.121305, 2009.
DOI : 10.1103/PhysRevB.80.121305
URL : https://hal.archives-ouvertes.fr/hal-00999581

J. Risti´cristi´c, E. Calleja, M. A. Sánchez-garcía, J. M. Ulloa, J. Sánchez-páramo et al., nanocolumns grown by molecular beam epitaxy, Physical Review B, vol.68, issue.12, p.125305, 2003.
DOI : 10.1103/PhysRevB.68.125305

J. Risti´cristi´c, C. Rivera, E. Calleja, S. Fernández-garrido, M. Povoloskyi et al., quantum disks grown by molecular-beam epitaxy, Physical Review B, vol.72, issue.8, p.85330, 2005.
DOI : 10.1103/PhysRevB.72.085330

R. Songmuang, D. Kalita, P. Sinha, M. Den-hertog, R. André et al., Strong suppression of internal electric field in GaN/AlGaN multi-layer quantum dots in nanowires, Applied Physics Letters, vol.99, issue.14, p.141914, 2011.
DOI : 10.1063/1.3646389
URL : https://hal.archives-ouvertes.fr/hal-01000144

J. B. Schlager, K. A. Bertness, P. T. Blanchard, L. H. Robins, A. Roshko et al., Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy, Journal of Applied Physics, vol.103, issue.12, p.124309, 2008.
DOI : 10.1063/1.2940732

C. Hauswald, T. Flissikowski, T. Gotschke, R. Calarco, L. Geelhaar et al., Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires, Physical Review B, vol.88, issue.7, p.75312, 2013.
DOI : 10.1103/PhysRevB.88.075312

P. Hille, J. Müßener, P. Becker, M. De-la-mata, N. Rosemann et al., Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping, Applied Physics Letters, vol.104, issue.10, p.102104, 2014.
DOI : 10.1063/1.4868411

M. A. Sanchez-garcia, E. Calleja, E. Monroy, F. J. Sanchez, F. Calle et al., The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1), Journal of Crystal Growth, vol.183, issue.1-2, p.23, 1998.
DOI : 10.1016/S0022-0248(97)00386-2

E. Calleja, M. A. Sánchez-garcía, F. J. Sánchez, F. Calle, F. B. Naranjo et al., Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy, Physical Review B, vol.62, issue.24, p.16826, 2000.
DOI : 10.1103/PhysRevB.62.16826

R. Songmuang, O. Landré, and B. Daudin, From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer, Applied Physics Letters, vol.91, issue.25, p.251902, 2007.
DOI : 10.1063/1.2817941

S. Fernández-garrido, J. Grandal, E. Calleja, M. A. Sánchez-garcía, and D. López-romero, A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111), Journal of Applied Physics, vol.106, issue.12, p.126102, 2009.
DOI : 10.1063/1.3267151

A. Dadgar, J. Bläsing, A. Diez, and A. Krost, Crack-Free, Highly Conducting GaN Layers on Si Substrates by Ge Doping, Applied Physics Express, vol.4, issue.1, p.11001, 2011.
DOI : 10.1143/APEX.4.011001

S. Fritze, A. Dadgar, H. Witte, M. Bügler, A. Rohrbeck et al., High Si and Ge n-type doping of GaN doping - Limits and impact on stress, Applied Physics Letters, vol.100, issue.12, p.122104, 2012.
DOI : 10.1063/1.3695172

J. Schörmann, P. Hille, M. Schäfer, J. Müßener, P. Becker et al., Germanium doping of self-assembled GaN nanowires grown by plasma-assisted molecular beam epitaxy, Journal of Applied Physics, vol.114, issue.10, p.103505, 2013.
DOI : 10.1063/1.4820264

R. Songmuang, T. Ben, B. Daudin, D. González, and E. Monroy, Identification of III???N nanowire growth kinetics via a marker technique, Nanotechnology, vol.21, issue.29, p.295605, 2010.
DOI : 10.1088/0957-4484/21/29/295605

J. Arbiol, C. Magen, P. Becker, G. Jacopin, A. Chernikov et al., Self-assembled GaN quantum wires on GaN/AlN nanowire templates, Nanoscale, vol.83, issue.23, p.7517, 2012.
DOI : 10.1039/c2nr32173d

M. Sénès, K. L. Smith, T. M. Smeeton, S. E. Hooper, and J. Heffernan, quantum dots grown by molecular beam epitaxy, Physical Review B, vol.75, issue.4, p.45314, 2007.
DOI : 10.1103/PhysRevB.75.045314

F. Guillot, E. Bellet-amalric, E. Monroy, M. Tchernycheva, L. Nevou et al., Si-doped GaN???AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths, Journal of Applied Physics, vol.100, issue.4, p.44326, 2006.
DOI : 10.1063/1.2335400

Z. Ga?evi´ga?evi´c, A. Das, J. Teubert, Y. Kotsar, P. K. Kandaswamy et al., Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy, Journal of Applied Physics, vol.109, issue.10, p.103501, 2011.
DOI : 10.1063/1.3590151

C. Himwas, R. Songmuang, L. S. Dang, J. Bleuse, L. Rapenne et al., Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots, Applied Physics Letters, vol.101, issue.24, p.241914, 2012.
DOI : 10.1063/1.4770075
URL : https://hal.archives-ouvertes.fr/hal-01021386

P. K. Kandaswamy, H. Machhadani, Y. Kotsar, S. Sakr, A. Das et al., Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates, Applied Physics Letters, vol.96, issue.14, p.141903, 2010.
DOI : 10.1063/1.3379300
URL : https://hal.archives-ouvertes.fr/hal-01067374

S. Birner, T. Zibold, T. Andlauer, T. Kubis, M. Sabathil et al., nextnano: General Purpose 3-D Simulations, IEEE Transactions on Electron Devices, vol.54, issue.9, p.2137, 2007.
DOI : 10.1109/TED.2007.902871

P. K. Kandaswamy, F. Guillot, E. Bellet-amalric, E. Monroy, L. Nevou et al., GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance, Journal of Applied Physics, vol.104, issue.9, p.93501, 2008.
DOI : 10.1063/1.3003507

M. Bertelli, P. Löptien, M. Wenderoth, A. Rizzi, R. G. Ulbrich et al., surface, Physical Review B, vol.80, issue.11, p.115324, 2009.
DOI : 10.1103/PhysRevB.80.115324

S. Park, Crystal Orientation Effects on Electronic Properties of Wurtzite GaN/AlGaN Quantum Wells with Spontaneous and Piezoelectric Polarization, Japanese Journal of Applied Physics, vol.39, issue.Part 1, No. 6A, p.3478, 2000.
DOI : 10.1143/JJAP.39.3478

L. Rigutti, J. Teubert, G. Jacopin, F. Fortuna, M. Tchernycheva et al., nanowire quantum discs with low Al content, Physical Review B, vol.82, issue.23, p.235308, 2010.
DOI : 10.1103/PhysRevB.82.235308
URL : https://hal.archives-ouvertes.fr/in2p3-00577207

C. Rivera, U. Jahn, T. Flissikowski, J. L. Pau, E. Muñoz et al., Strain-confinement mechanism in mesoscopic quantum disks based on piezoelectric materials, Physical Review B, vol.75, issue.4, p.45316, 2007.
DOI : 10.1103/PhysRevB.75.045316