Charge pumping through a single donor atom

G. C. Tettamanzi (1) , Romain Wacquez (2) , S. Rogge (1)

1 UNSW - University of New South Wales [Sydney]
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a single atom transistor. By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at 1 GHz are generated, even if operating at 4.2 K, with no magnetic field applied, and only when one barrier is addressed by sinusoidal voltage cycles.

Domaines: Physique [physics]

G. C. Tettamanzi, Romain Wacquez, S. Rogge. Charge pumping through a single donor atom. New Journal of Physics, 2014, 16, pp.63036. ⟨10.1088/1367-2630/16/6/063036⟩. ⟨cea-01233396⟩