Charge pumping through a single donor atom - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Access content directly
Journal Articles New Journal of Physics Year : 2014

Charge pumping through a single donor atom


Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a single atom transistor. By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at 1 GHz are generated, even if operating at 4.2 K, with no magnetic field applied, and only when one barrier is addressed by sinusoidal voltage cycles.

Dates and versions

cea-01233396 , version 1 (25-11-2015)



G. C. Tettamanzi, Romain Wacquez, S. Rogge. Charge pumping through a single donor atom. New Journal of Physics, 2014, 16, pp.63036. ⟨10.1088/1367-2630/16/6/063036⟩. ⟨cea-01233396⟩
25 View
0 Download



Gmail Facebook Twitter LinkedIn More