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Charge pumping through a single donor atom

Abstract : Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a single atom transistor. By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at 1 GHz are generated, even if operating at 4.2 K, with no magnetic field applied, and only when one barrier is addressed by sinusoidal voltage cycles.
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Contributor : Marianne Leriche Connect in order to contact the contributor
Submitted on : Wednesday, November 25, 2015 - 9:52:47 AM
Last modification on : Thursday, June 11, 2020 - 5:04:05 PM

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G. C. Tettamanzi, Romain Wacquez, S. Rogge. Charge pumping through a single donor atom. New Journal of Physics, 2014, 16, pp.63036. ⟨10.1088/1367-2630/16/6/063036⟩. ⟨cea-01233396⟩



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