Impact of storage induced outgassing organic contamination on laser induced damage of silica optics at 351 nm - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Access content directly
Journal Articles Optics Express Year : 2009

Impact of storage induced outgassing organic contamination on laser induced damage of silica optics at 351 nm

Abstract

The impact of storage conditions on laser induced damage density at 351 nm on bare fused polished silica samples has been studied. Intentionally outgassing of polypropylene pieces on silica samples was done. We evidenced an important increase of laser induced damage density on contaminated samples demonstrating that storage could limit optics lifetime performances. Atomic Force Microscopy (AFM) and Gas Chromatography-Mass Spectrometry (GC-MS) have been used to identify the potential causes of this effect. It shows that a small quantity of organic contamination deposited on silica surface is responsible for this degradation. Various hypotheses are proposed to explain the damage mechanism. The more likely hypothesis is a coupling between surface defects of optics and organic contaminants.
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Dates and versions

cea-01217067 , version 1 (18-10-2015)

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Karell Bien-Aimé, C Belin, Laurent Gallais, Pierre Grua, Evelyne Fargin, et al.. Impact of storage induced outgassing organic contamination on laser induced damage of silica optics at 351 nm. Optics Express, 2009, 17 (21), pp.18703-18713. ⟨10.1364/OE.17.018703⟩. ⟨cea-01217067⟩
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