Influence of a Ta spacer on the magnetic and transport properties of perpendicular magnetic tunnel junctions

Abstract : Ultrathin Ta layers were inserted in the bottom hard (Co/Pt)/Ta/CoFeB/MgO magnetic electrode of perpendicular magnetic tunnel junctions. The magnetization of the top part of this electrode abruptly falls in-plane when the Ta thickness exceeds 0.45 nm. This results from the balance between the various energy terms acting on this layer (exchange-like coupling through Ta, demagnetizing energy, and perpendicular anisotropy at the CoFeB/MgO interface). For small Ta thicknesses, this insertion leads to a strong improvement of the tunnel magnetoresistance, as long as the magnetization of all layers remains perpendicular-to-plane.
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Submitted on : Wednesday, October 8, 2014 - 4:12:44 PM
Last modification on : Thursday, April 4, 2019 - 9:44:02 AM

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Léa Cuchet, Bernard Rodmacq, Stéphane Auffret, Ricardo C. Sousa, Clarisse Ducruet, et al.. Influence of a Ta spacer on the magnetic and transport properties of perpendicular magnetic tunnel junctions. Applied Physics Letters, American Institute of Physics, 2013, 103 (5), pp.052402 - 052402-4. ⟨10.1063/1.4816968⟩. ⟨cea-01073021⟩

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