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Journal Articles Applied Physics Letters Year : 2013

Influence of a Ta spacer on the magnetic and transport properties of perpendicular magnetic tunnel junctions

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Abstract

Ultrathin Ta layers were inserted in the bottom hard (Co/Pt)/Ta/CoFeB/MgO magnetic electrode of perpendicular magnetic tunnel junctions. The magnetization of the top part of this electrode abruptly falls in-plane when the Ta thickness exceeds 0.45 nm. This results from the balance between the various energy terms acting on this layer (exchange-like coupling through Ta, demagnetizing energy, and perpendicular anisotropy at the CoFeB/MgO interface). For small Ta thicknesses, this insertion leads to a strong improvement of the tunnel magnetoresistance, as long as the magnetization of all layers remains perpendicular-to-plane.
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Dates and versions

cea-01073021 , version 1 (31-08-2021)

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Léa Cuchet, Bernard Rodmacq, Stéphane Auffret, Ricardo C. Sousa, Clarisse Ducruet, et al.. Influence of a Ta spacer on the magnetic and transport properties of perpendicular magnetic tunnel junctions. Applied Physics Letters, 2013, 103 (5), pp.052402. ⟨10.1063/1.4816968⟩. ⟨cea-01073021⟩
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