One-Dimensional Nanostructures: Synthesis, Characterization, and Applications, Advanced Materials, vol.15, issue.5, pp.353-389, 2003. ,
DOI : 10.1002/adma.200390087
VAPOR???LIQUID???SOLID MECHANISM OF SINGLE CRYSTAL GROWTH, Applied Physics Letters, vol.4, issue.5, pp.89-90, 1964. ,
DOI : 10.1063/1.1753975
Binary Alloy Phase Diagrams, Nanotechnology, issue.6, pp.18-505307, 1998. ,
A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires, Science, vol.279, issue.5348, pp.208-211, 1998. ,
DOI : 10.1126/science.279.5348.208
Controlled Growth of Si Nanowire Arrays for Device Integration, Nano Letters, vol.5, issue.3, pp.457-460, 2005. ,
DOI : 10.1021/nl047990x
Influence of Plasma Stimulation on Si Nanowire Nucleation and Orientation Dependence, Advanced Materials, vol.316, issue.18, pp.2603-2607, 2007. ,
DOI : 10.1002/adma.200602944
Plasma assisted growth of nanotubes and nanowires, Surface and Coatings Technology, vol.201, issue.22-23, pp.9215-9220, 2007. ,
DOI : 10.1016/j.surfcoat.2007.04.067
Transition from thin gold layers to nano-islands on TCO for catalyzing the growth of one-dimensional nanostructures, physica status solidi (a), vol.17, issue.12, pp.1429-1434, 2008. ,
DOI : 10.1002/pssa.200778158
URL : https://hal.archives-ouvertes.fr/cea-00329882
investigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces, Applied Physics Letters, vol.54, issue.21, pp.2088-2090, 1989. ,
DOI : 10.1063/1.101511
Degradation of ITO Film in Glow-Discharge Plasma, Japanese Journal of Applied Physics, vol.20, issue.11, pp.783-786, 1981. ,
DOI : 10.1143/JJAP.20.L783
Wetting of Si surfaces by Au???Si liquid alloys, Journal of Applied Physics, vol.93, issue.7, pp.3886-3892, 2003. ,
DOI : 10.1063/1.1558996
alloy films grown by molecular beam epitaxy on Si, Applied Physics Letters, vol.67, issue.16, pp.2287-2289, 1995. ,
DOI : 10.1063/1.115128
Degradation of tin???doped indium???oxide film in hydrogen and argon plasma, Journal of Applied Physics, vol.62, issue.3, pp.912-916, 1987. ,
DOI : 10.1063/1.339699